2SC4135S-TL-E Allicdata Electronics
Allicdata Part #:

2SC4135S-TL-EOSTR-ND

Manufacturer Part#:

2SC4135S-TL-E

Price: $ 0.27
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 100V 2A TP-FA
More Detail: Bipolar (BJT) Transistor NPN 100V 2A 120MHz 1W Sur...
DataSheet: 2SC4135S-TL-E datasheet2SC4135S-TL-E Datasheet/PDF
Quantity: 1400
700 +: $ 0.24753
1400 +: $ 0.19803
2100 +: $ 0.17946
4900 +: $ 0.16708
17500 +: $ 0.16502
Stock 1400Can Ship Immediately
$ 0.27
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Power - Max: 1W
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: 2-TP-FA
Base Part Number: 2SC4135
Description

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2SC4135S-TL-E is a kind of bipolar junction transistor (BJT). It is classified as a single transistor and is widely used in applications from current amplifiers to voltage regulators. In this article, we will look at the application field and working principle of the 2SC4135S-TL-E.

Application Field of 2SC4135S-TL-E

The 2SC4135S-TL-E is a general-purpose NPN transistor commonly used in various electronic systems. It has moderate current and power handling capability. It can be used in a wide range of circuits to amplify current, activate and switch off electrical components, and regulate voltage levels.

With its low-noise performance, the 2SC4135S-TL-E is especially useful in audio amplifiers and other circuits that are sensitive to noise. It can also be used in radio-frequency amplifier circuits and solar battery power systems, making it a very versatile device with a wide range of applications.

Working Principle of 2SC4135S-TL-E

The 2SC4135S-TL-E is a three-terminal, NPN bipolar junction transistor. It consists of a base, a collector, and an emitter. Electric current flows in two directions through the transistors: from the collector to the emitter and from the base to the emitter. When an electric current flows from the base to the emitter, it triggers a change in the amount of current that flows from the collector to the emitter. This change in current is known as current amplification.

When the base-emitter current, also known as a forward bias current, is increased, the collector-emitter current is amplified. This phenomenon is known as beta-amplification, or β-amplification, and is the basis of bipolar transistors. The base-emitter and collector-emitter junctions operate as current regulating diodes and regulate the output current of the transistor.

The 2SC4135S-TL-E is capable of a maximum voltage between collector and emitter of 80V and a maximum collector current of 500mA. It is an ideal solution for low-cost applications that require low noise levels, with minimum hFE values between 30 and 300.

Conclusion

The 2SC4135S-TL-E is a single bipolar junction transistor that is commonly used in a wide range of electronic applications. It has low-noise performance and moderate voltage and current handling capabilities, and is suitable for a variety of circuit designs that require current and voltage regulation and amplification. Its base-emitter and collector-emitter junctions operate as current regulating diodes and are the basis of its β-amplification process. Knowing the application field and working principle of the 2SC4135S-TL-E will help you determine whether this transistor is suitable for your circuit design.

The specific data is subject to PDF, and the above content is for reference

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