
Allicdata Part #: | 2SC4135S-TL-EOSTR-ND |
Manufacturer Part#: |
2SC4135S-TL-E |
Price: | $ 0.27 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 100V 2A TP-FA |
More Detail: | Bipolar (BJT) Transistor NPN 100V 2A 120MHz 1W Sur... |
DataSheet: | ![]() |
Quantity: | 1400 |
700 +: | $ 0.24753 |
1400 +: | $ 0.19803 |
2100 +: | $ 0.17946 |
4900 +: | $ 0.16708 |
17500 +: | $ 0.16502 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 100mA, 1A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 140 @ 100mA, 5V |
Power - Max: | 1W |
Frequency - Transition: | 120MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | 2-TP-FA |
Base Part Number: | 2SC4135 |
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2SC4135S-TL-E is a kind of bipolar junction transistor (BJT). It is classified as a single transistor and is widely used in applications from current amplifiers to voltage regulators. In this article, we will look at the application field and working principle of the 2SC4135S-TL-E.
Application Field of 2SC4135S-TL-E
The 2SC4135S-TL-E is a general-purpose NPN transistor commonly used in various electronic systems. It has moderate current and power handling capability. It can be used in a wide range of circuits to amplify current, activate and switch off electrical components, and regulate voltage levels.
With its low-noise performance, the 2SC4135S-TL-E is especially useful in audio amplifiers and other circuits that are sensitive to noise. It can also be used in radio-frequency amplifier circuits and solar battery power systems, making it a very versatile device with a wide range of applications.
Working Principle of 2SC4135S-TL-E
The 2SC4135S-TL-E is a three-terminal, NPN bipolar junction transistor. It consists of a base, a collector, and an emitter. Electric current flows in two directions through the transistors: from the collector to the emitter and from the base to the emitter. When an electric current flows from the base to the emitter, it triggers a change in the amount of current that flows from the collector to the emitter. This change in current is known as current amplification.
When the base-emitter current, also known as a forward bias current, is increased, the collector-emitter current is amplified. This phenomenon is known as beta-amplification, or β-amplification, and is the basis of bipolar transistors. The base-emitter and collector-emitter junctions operate as current regulating diodes and regulate the output current of the transistor.
The 2SC4135S-TL-E is capable of a maximum voltage between collector and emitter of 80V and a maximum collector current of 500mA. It is an ideal solution for low-cost applications that require low noise levels, with minimum hFE values between 30 and 300.
Conclusion
The 2SC4135S-TL-E is a single bipolar junction transistor that is commonly used in a wide range of electronic applications. It has low-noise performance and moderate voltage and current handling capabilities, and is suitable for a variety of circuit designs that require current and voltage regulation and amplification. Its base-emitter and collector-emitter junctions operate as current regulating diodes and are the basis of its β-amplification process. Knowing the application field and working principle of the 2SC4135S-TL-E will help you determine whether this transistor is suitable for your circuit design.
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