Allicdata Part #: | 2SC4793(PAIOFM)-ND |
Manufacturer Part#: |
2SC4793(PAIO,F,M) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS NPN 1A 230V TO220-3 |
More Detail: | Bipolar (BJT) Transistor NPN 230V 1A 100MHz 2W Thr... |
DataSheet: | 2SC4793(PAIO,F,M) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 230V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 100mA, 5V |
Power - Max: | 2W |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220NIS |
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The 2SC4793 is a type of transistor that falls into the family of Bipolar Junction Transistors (BJT), and is classified as a single transistor. Transistors such as the 2SC4793 are widely used to amplify or switch electronic signals and electrical power.
The 2SC4793 is a PNP transistor, meaning it uses a P type base in order to control the current flow through the device. The PNP transistor is considered to be an active semiconductor device because it is used to inject either electrons or holes into the base region of the circuit. This is what allows the PNP transistor to provide an electrical signal.
The 2SC4793 is an NPN type transistor, meaning it uses an N type base in order to control the current flow. The NPN transistor is considered to be an active semiconductor device due to its ability to inject electrons into the base region of the circuit. This is what allows the NPN transistor to provide an electrical signal.
The 2SC4793 is a field effect transistor, meaning it is an active semiconductor device consisting of one or more PN junctions operated by externally applied electric fields. The field effect transistor is commonly used to amplify or switch existing signals or electrical power, and can be used to provide increased switching speed, increased input and output dynamic range, and improved noise suppression.
One of the major advantages of using a field effect transistor is its ability to operate with a low current and low voltage, which can be especially useful in applications where power and space constraints are a concern. The transistor also exhibits excellent performance characteristics in normal operation and is highly reliable. In addition, it has minimal power dissipation and produces low heat.
When it comes to the application field and working principle of the 2SC4793, it can be used in various applications, such as high frequency, high voltage, and high power applications. It can be used as an amplifier, switch or a power supply or can be used in a variety of other applications.
The 2SC4793 utilizes a gate voltage to control the flow of current, allowing the device to provide an electrical signal. This is accomplished by altering the gate voltage of the device which controls the flow of current through the device. As the gate voltage is changed, the current through the 2SC4793 is also changed, allowing it to switch between a low or high output state. The device also exhibits excellent reliability and has minimal power dissipation. Additionally, the 2SC4793 can also be used in a variety of different applications, such as in high frequency, high voltage and high power applications.
In conclusion, the 2SC4793 is a type of transistor that falls into the family of Bipolar Junction Transistors (BJT). It is classified as a single transistor, and it utilizes a PNP or NPN base in order to control the current flow through the device. It is also a field effect transistor, which is an active semiconductor device consisting of one or more PN junctions operated by externally applied electric fields. The 2SC4793 also exhibits excellent performance characteristics in normal operation, has minimal power dissipation, and can be used in a variety of different applications.
The specific data is subject to PDF, and the above content is for reference
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