Allicdata Part #: | 2SC4208ARATB-ND |
Manufacturer Part#: |
2SC4208ARA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS NPN 50V 0.5A TO-92NL |
More Detail: | Bipolar (BJT) Transistor NPN 50V 500mA 150MHz 1W T... |
DataSheet: | 2SC4208ARA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 30mA, 300mA |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 150mA, 10V |
Power - Max: | 1W |
Frequency - Transition: | 150MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | TO-92NL-A1 |
Base Part Number: | 2SC4208 |
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The 2SC4208ARA is a single bipolar transistor device that consists of three terminals. The three terminals are the emitter, collector, and the base. It is widely used in today’s device applications due to its superior thermal tracking, low On Resistance, and its low Vce saturation. The device also has a high breakdown voltage making it ideal for a number of different device applications.
Application Field
The main area of use for the 2SC4208ARA is in low power general purpose applications such as audio, video, switching, and power supplies. It is an ideal choice for such applications due to its performance and low On Resistance. Additionally the 2SC4208ARA is suitable for digital circuits that require low Vce saturation. The transistor is also often used for drivers for DC motors and for drivers for relays.
Working Principle
Like all transistors, the 2SC4208ARA transistor operates based on the principle of majority carrier injection. The transistor comprises of three electrodes, the Base, Collector and Emitter, which are placed close together in a semiconductor substrate material, usually silicon. Carriers, electrons and holes, flow in the semiconductor substrate between Base and Collector regions, and between Base and Emitter regions. When the Base terminal is forward biased (high voltage applied to Base relative to Emitter) a majority carrier injection occurs, current flow occurs between the Collector and Emitter and the transistor is switched ON.
Normally the connection between the Base and the Collector is weak and only small amounts of current can flow. As the current flow increases, it contests with the voltage applied to the Base, resulting in the decrease of the Base current. This saturation effect can limit the maximum current flow between the Collector and the Emitter. The amount of current limited depends on the amount of collector current, the Collector-Emitter voltage, and the amount of current flowing through the Base.
The 2SC4208ARA transistor has a high breakdown voltage of -150 volts, making it suitable for a variety of applications. It also has a very low On Resistance which is great for applications such as audio, video, switching and power supplies. Furthermore, it has a good thermal tracking and a low Vce saturation, both of which are beneficial for devices.
Conclusion
The 2SC4208ARA transistor is a single bipolar transistor device used widely in low power general purpose applications such as audio, video, switching, and power supplies. It has a low On Resistance and a high breakdown voltage, making it suitable for a number of different device applications. Furthermore, it has a good thermal tracking and a low Vce saturation. All these features make the 2SC4208ara transistor an ideal choice for a variety of device applications.
The specific data is subject to PDF, and the above content is for reference
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