2SC4081RT1 Allicdata Electronics
Allicdata Part #:

2SC4081RT1OS-ND

Manufacturer Part#:

2SC4081RT1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 50V 0.1A SC70
More Detail: Bipolar (BJT) Transistor NPN 50V 100mA 200mW Surf...
DataSheet: 2SC4081RT1 datasheet2SC4081RT1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Power - Max: 200mW
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)
Base Part Number: 2SC4081
Description

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2SC4081RT1 is a transistor with excellent performance in terms of power requirements, switching speed, and frequency response. This high-gain NPN general-purpose transistors are manufactured in a standard TO-220 package. It can be used for a variety of applications from small portable electronics to industrial equipment. This transistor is usually used in RF and AF voltage amplification circuits, switching circuits, and power supply circuits.

This transistor is designed with a heat-resistant insulation package that allows it to operate in high temperature environments. It can also be used in motor-demand applications. The internal structure of 2SC4081RT1 consists of a P-base, N-emitter and N-collector. The P-base layer has two active areas. One of the active areas is a small-signal active layer while the other acts as a power-transistor formation.

The P-base layer acts as a controlling element for this transistor, and it can be activated by large and small currents that flow from the base to the emitter. This transistor works in accordance with the principle known as Transistor Action. In this principle, the maximum amount of current flows through the collector-base junction when the base current is large enough to activate the P-base layer. When the small-signal active layer is triggered, it causes large current to flow through the emitter. This current is then amplified at the collector. By changing the amount of base current, it is possible to control the amount of current that flows through the collector-base junction.

2SC4081RT1’s application field includes DC/DC converters, P.A. systems, switching applications, audio amplifiers and so on. It has excellent power dissipation capability and high-current rating. It has excellent thermal performance, due to its well-designed heat dissipation system. The transistor provides fast switching speed and low saturation threshold, which makes it suitable for high frequency applications.

The transistor has a high current gain of between 65 and 85, which makes it well suited for high-voltage applications. It also has a high breakdown voltage rating of 20V, making it safe for use in power supply circuits. The 2SC4081RT1 also has a low noise figure, making it a valuable addition to applications that require low electro-magnetic radiation. This high performance transistor offers excellent reliability and stability, allowing it to be used in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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