Allicdata Part #: | 2SC4793YHF(M-ND |
Manufacturer Part#: |
2SC4793,YHF(M |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS NPN 1A 230V TO220-3 |
More Detail: | Bipolar (BJT) Transistor NPN 230V 1A 100MHz 2W Thr... |
DataSheet: | 2SC4793,YHF(M Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 230V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 100mA, 5V |
Power - Max: | 2W |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220NIS |
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2SC4793,YHF(M Application Field and Working Principle
The 2SC4793,YHF(M Transistor is a bipolar junction transistor (BJT) belonging to the single family that is widely used in applications. The transistor is divided into four parts which are base, emitter collector and substrate. In addition, the characteristics of the 2SC4793,YHF(M depends on the construction and manufacturing process.
The 2SC4793,YHF(M can be used in a variety of fields. It is mainly used in amplifiers, voltage regulators, power management circuits, switching circuits and so on. Furthermore, it can also be used in audio players, radio receivers, OTP devices and other electronic circuits.
In terms of its working principle, the 2SC4793,YHF(M follows the basic principle of operation that is used in all BJT transistors. When a current is supplied to the base of the transistor, the current passes through and is amplified. This amplified current then passes through the collector passing from the emitter to the collector. The substrate at the bottom of the transistor serves as a potential barrier and prevents any leakage of the current passing through the transistor. This process is the basics of operation for the 2SC4793,YHF(M.
The 2SC4793,YHF(M is able to provide high power output with excellent reliability and stability. The technical characteristics of the 2SC4793,YHF(M include its maximum collector current of 1.5A, maximum collector to emitter voltage of 30V, collective power dissipation of 1.2W and collector to base breakdown voltage of 35V. Other features of the 2SC4793,YHF(M are its fast switching speed, low ON state resistance and high DC voltage gain.
The 2SC4793,YHF(M is constructed using an N-channel enhancement mode MOSFET type process which results in a faster switching speed and higher reliability. This allows the device to be used in many different applications that require fast switching speed, reliable performance and excellent current conduction. Additionally, the MOSFET type process has a low power dissipation and high frequency operation capability.
The 2SC4793,YHF(M can be used in a range of applications. For example, it can be used in battery chargers, DC to DC converters, switch mode power supplies, LED drivers and automotive applications. Additionally, it can also be used in micro-controllers, computers, audio equipment and RF transceivers.
In conclusion, the 2SC4793,YHF(M Transistor is a Single Bipolar Junction Transistor that is widely used in applications. It can provide a fast switching speed, excellent reliability and excellent current conduction. Additionally, the transistor is widely used in battery chargers, DC to DC converters, switch mode power supplies and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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