| Allicdata Part #: | 2SC4935-YQ(J-ND |
| Manufacturer Part#: |
2SC4935-Y,Q(J |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | TRANS NPN 3A 50V TO220-3 |
| More Detail: | Bipolar (BJT) Transistor NPN 50V 3A 80MHz 2W Throu... |
| DataSheet: | 2SC4935-Y,Q(J Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 3A |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Vce Saturation (Max) @ Ib, Ic: | 600mV @ 200mA, 2A |
| Current - Collector Cutoff (Max): | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 500mA, 2V |
| Power - Max: | 2W |
| Frequency - Transition: | 80MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220NIS |
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The 2SC4935-Y,Q(J is a NPN epitaxial transistor in a plastic molded package from Toshiba designed specifically for high-frequency low-noise amplification applications. It is mainly used for FM Band’s receiver applications, but also can be used for a wide range of applications such as amplifiers, reactive loads, modulators and oscillators. It has an extremely high small-signal and power gain, low noise, high-frequency capability and high current-handling capability. It has excellent stability and reliability.
The 2SC4935-Y,Q(J is classified into Bipolar Transistors - Single, which includes the NPN and PNP transistors. This transistor has two connections on the emitter, one of which is the base, and the other is the emitter. It also has two connections on the collector, which are the collector and the grounded base. It has three terminals, which are the emitter, collector and base. The collector and base are connected together, and the emitter is connected to the base.
It has two types of operation, which are the common emitter configuration and the common collector configuration. The common emitter configuration is the most widely used for amplifying applications, where the current gain of the transistor is the major factor. The common collector configuration is used for impedance matching and current switching applications, where the voltage gain is the major factor. When the transistor is in the active region, its base current controls the amount of collector current. This base current is determined by the voltage at the base. When a voltage is applied to the base, a small amount of current flows from the base to the emitter, which in turn causes a larger current to flow from the collector to the emitter. This phenomenon is known as amplification and is the basis of how transistors work.
The 2SC4935-Y,Q(J has an extremely high current-handling capability of up to one hundred amps. It has a wide range of operating conditions and its maximum frequency of operation is seven hundred megahertz. Its power gain is thirty-six decibels at fifty megahertz and its small-signal gain is sixty-five decibels at fifty megahertz. Its noise figure is three hundred eighty-four decibels at fifty megahertz. The 2SC4935-Y,Q(J offers superior performance in a variety of applications such as amplifiers, modulators, oscillators, and reactive loads.
The 2SC4935-Y,Q(J is a great choice for any low-noise FM band receiver or any other high-frequency applications. It has excellent power and small-signal gain, low noise, and superior current-handling capabilities. The wide range of operating conditions and high frequency capability make it suitable for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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2SC4935-Y,Q(J Datasheet/PDF