| Allicdata Part #: | 2SC5010-A-ND |
| Manufacturer Part#: |
2SC5010-A |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | CEL |
| Short Description: | RF TRANSISTOR NPN SOT-523 |
| More Detail: | RF Transistor NPN 6V 30mA 12GHz 125mW Surface Moun... |
| DataSheet: | 2SC5010-A Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Strip |
| Part Status: | Obsolete |
| Transistor Type: | NPN |
| Voltage - Collector Emitter Breakdown (Max): | 6V |
| Frequency - Transition: | 12GHz |
| Noise Figure (dB Typ @ f): | 1.5dB @ 2GHz |
| Gain: | 8.5dB |
| Power - Max: | 125mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 75 @ 10mA, 3V |
| Current - Collector (Ic) (Max): | 30mA |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | SOT-523 |
| Supplier Device Package: | -- |
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A 2SC5010-A is a type of bipolar junction transistor (BJT) used in radio frequency (RF) applications. As a BJT, it is composed of three layers of semiconductor material, each consisting of a negative, positively charged, and neutral region. The region between the base and emitter is known as the base-emitter junction and it is here that current flow occurs when the transistor is in active mode. The region between the collector and emitter is known as the collector-emitter junction and it is here that the actual amplification of the signal occurs.
The 2SC5010-A is an NPN type BJT and it is suited for use in a wide range of RF applications such as television tuners, amplifiers, oscillators and oscillator control circuits. Its maximum collector current is 1.2 A and its maximum collector-base voltage is 30 V. Its maximum power dissipation is 20 W and its frequency range is from 50 MHz up to 900 MHz. It is encapsulated in a plastic package for ease of installation in PCBs and other electronic devices.
The working principle of the 2SC5010-A is the same as any other BJT. When a DC voltage is applied to the base-emitter junction, electrons are attracted to the positive terminal of the voltage source, thus creating an overall movement of current through the transistor. This current produces a collector-emitter voltage which is amplified in proportion to the amount of current passing through the base-emitter junction. This amplified output voltage may be used to produce an amplified signal, as in the case of an amplifier circuit.
The 2SC5010-A can be used in many circuits, from amplifiers and oscillators to oscillator control circuits, due to its high current carrying and switching capabilities. Its high frequency range of up to 900 MHz also makes it suitable for RF applications. Its low noise characteristics allow for more accurate and precise control over frequency and amplitude of the outputted signal. It is also suitable for a wide range of temperature settings and its plastic package makes for easier installation.
The 2SC5010-A is a reliable and powerful RF transistor, and is capable of producing clean and precise amplified signals. It has good current carrying and switching capabilities, and a wide frequency range of up to 900 MHz making it suitable for a wide range of RF applications. Its low noise characteristics also contribute to its precision of frequency and amplitude control. This makes the transistor very useful for both commercial and amateur radio applications.
The specific data is subject to PDF, and the above content is for reference
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2SC5010-A Datasheet/PDF