Allicdata Part #: | 2SC5226A-5-TL-EOSTR-ND |
Manufacturer Part#: |
2SC5226A-5-TL-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN BIPO VHF-UHF MCP |
More Detail: | RF Transistor NPN 10V 70mA 7GHz 150mW Surface Moun... |
DataSheet: | 2SC5226A-5-TL-E Datasheet/PDF |
Quantity: | 6000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 10V |
Frequency - Transition: | 7GHz |
Noise Figure (dB Typ @ f): | 1dB @ 1GHz |
Gain: | 12dB |
Power - Max: | 150mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 135 @ 20mA, 5V |
Current - Collector (Ic) (Max): | 70mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | 3-MCP |
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2SC5226A-5-TL-E Application Field and Working Principle
2SC5226A-5-TL-E is a type of bipolar junction transistor (BJT) that is specifically designed for use in radio frequency (RF) applications. It is used extensively in everyday products such as mobile phones, radios, televisions, and other consumer electronics. The 2SC5226A-5-TL-E is a silicon NPN epitaxial planar BJT which is manufactured with a surface mount package. This package allows for easier surface mounting and also allows for better thermal management.
BJT Overview
Bipolar Junction Transistors (BJTs) are fundamental three-terminal electronic semiconductor components that are extensively used for applications where power switching is needed. They are widely used in many electronic circuits and devices such as amplifiers, voice synthesis, switching regulators, active filters, and pulse generators. BJT generally consists of three terminals namely, the emitter (E), the base (B) and the collector (C).
2SC5226A-5-TL-E Operation
2SC5226A-5-TL-E BJT operates much like a standard BJT. Current flows between the emitter and the collector when the base voltage is higher than the forward-biased base-emitter junction. This will cause a current to flow from the emitter to the collector. This current flow can be controlled by changing the base voltage, thus allowing the device to be used as an electronically controlled switch.
2SC5226A-5-TL-E Advantages
The 2SC5226A-5-TL-E BJT has several advantages when used in RF applications. One advantage is that it is specifically designed for RF applications. This means that it is optimized for higher frequencies and has features that allow it to work effectively at those frequencies. It also offers superior gain and current gain-bandwidth product compared to other BJTs. The superior current gain-bandwidth product allows for faster switching speeds and better signal integrity. This makes the 2SC5226A-5-TL-E an attractive option in RF circuits and devices.
2SC5226A-5-TL-E Limitation
The 2SC5226A-5-TL-E also has some limitations. The device has a maximum operating temperature of 150 degrees Celsius, which may limit its use in extreme temperature environments. Additionally, the junction temperature can be limited by the package, which may limit the maximum power dissipation of the device. Additionally, the device has a relatively slow switching speed compared to other BJTs, which limits its use in high-speed applications.
Conclusion
The 2SC5226A-5-TL-E is a type of BJT that is specifically designed for use in radio frequency applications. It is manufactured with a surface mount package, which allows for easier surface mounting and better thermal management. The device offers superior gain and current gain-bandwidth product compared to other BJTs and is an attractive option for RF circuits and devices. It has some limitations, such as a maximum operating temperature, a relatively slow switching speed, and a limited power dissipation due to the package. Overall, the 2SC5226A-5-TL-E is an excellent choice for many RF applications.
The specific data is subject to PDF, and the above content is for reference
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