2SC5752-T1-A Allicdata Electronics
Allicdata Part #:

2SC5752-T1-A-ND

Manufacturer Part#:

2SC5752-T1-A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: CEL
Short Description: RF TRANSISTOR NPN SOT-343
More Detail: RF Transistor NPN 6V 100mA 12GHz 200mW Surface Mou...
DataSheet: 2SC5752-T1-A datasheet2SC5752-T1-A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
Gain: 13dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343
Description

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2SC5752-T1-A is a kind of RF transistor which falls into the category of Bipolar Junction Transistors (BJT). It is a type of device used to amplify or switch electronic signals, and is highly useful in a variety of applications. In this article, the application field and working principle of 2SC5752-T1-A will be discussed.

The 2SC5752-T1-A is specifically designed for use in communications, especially in the field of radio frequency. It is often used in products like communications receivers and amplifiers, and is also used in digital and analog telecommunication systems. Aside from communication systems, the 2SC5752-T1-A is also used in audio and video amplifiers, switching applications, and various instrumentation devices.

In terms of performance, the 2SC5752-T1-A can be considered to be a rather efficient transistor. Its typical maximum gain of 14dB at 900MHz is sufficient for most radio frequency applications, while its high frequency (up to 1000MHz) makes it suitable for use in high-speed digital systems. It is also able to handle a minimum of 600mA at 4.5V, making it a suitable choice for switching applications that require high power ratings.

The 2SC5752-T1-A is a type of NPN-type bipolar junction transistor, which means that it consists of two P-type and one N-type semiconductor regions. It consists of three terminals for connection, the collector (C), base (B) and emitter (E). The transistor can be used in either a common-emitter or common-base configuration. In the common-emitter configuration, the base terminal is connected to the input signal, the collector is the output terminal, and the emitter is connected to ground. In the common-base configuration, the base is connected to the output, the collector is connected to the input, and the emitter is connected to ground.

The working principle of the 2SC5752-T1-A is relatively simple. The base is connected to the input signal, and as the input signal varies (typically in a sinusoidal fashion), the current flow through the base-emitter junction also varies, resulting in a variation in the voltage across the collectors. This varying voltage acts as the output signal of the transistor, and can be amplified or switched as desired.

In summary, the 2SC5752-T1-A is a type of RF transistor which falls into the category of Bipolar Junction Transistors (BJT). It is highly efficient and can be used in both common-emitter and common-base configuration. It is mainly used in the field of communications and especially in the field of radio frequency, and its high frequency and high power rating make it suitable for applications requiring speed and power. Its working principle is also relatively simple, as it utilizes the variation in current flow through the base-emitter junction to produce a varying voltage across the collector, which can be then be amplified or switched as desired.

The specific data is subject to PDF, and the above content is for reference

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