2SC5916TLQ

2SC5916TLQ is a Single Bipolar Junction Transistor (BJT) project designed by Toshiba Semiconductor Japan. The device is a silicon NPN Transistor used for low noise amplifiers, UHF low frequency amplifiers, Mixers, and oscillators. The transistor includes two pinouts for the base (B1, B2) and two for the collector (C1, C2) and tow for the emitter (E1, E2). Features including low noise, high gain linearity, and long lifetime are features that standout for this component. The application field of the 2SC5916TLQ can be broken down into three main sections: low noise amplifiers, UHF low frequency amplifiers, and Oscillators. In relation to low noise amplifiers, these transistors are useful devices when it comes to translating input signals (often analog) into output signals referenced in terms of their loudness. Since these components have a low noise feature, this is one of the reasons why it is a great choice for completing low noise amplifier circuits.Ultra High Frequency (UHF) low frequency amplifiers are less common than standard amplifier design. This type of amplifier requires the ability to not just amplify, but also able to reject noise and keep the precision signature of the applied signal. The 2SC5916TLQ can help to provide users with the capability of building an amplifier that has a wide band of frequencies while also maintaining characteristics such as linear amplitude response, low group delay distortion, and high signal-to-noise ratio. Lastly, oscillators are integral components found in many designs. The oscillator circuit is essential to the generation of a signal that has a repeating signal pattern at a given rate. Amplifiers have an important role in oscillators since they modify the gain and the frequency of signals. As well as having low noise properties, the 2SC5916TLQ also has demonstrated consistent amplitude response and great linearity across a broad frequency range. It used to be difficult to find a bipolar transistor which achieved such a low noise level and high linearity but with the production of 2SC5916TLQ, this has changed. The working principle of this transistor involves the use of its two base pins, two collector pins and two emitter pins. The applied current (Ib) on the two base pins creates the Collector-emitter voltage (VB-VE). This is determined by the current gain (hFE) of the transistor. This is an important gain required for amplifying low-level signals. For the transistor to achieve linearity and low distortion, the current gain should have a consistent value across a given frequency range. This is why the 2SC5916TLQ has such a consistent amplitude response at different frequencies. This also helps in low harmonic distortion due to the high current gain of the transistor. In conclusion, the 2SC5916TLQ is a commonly used, silicon NPN transistor designed by Toshiba Semiconductor and is useful in a variety of applications. Low noise amplifiers, UHF Low frequency amplifiers, and Oscillators are the main applications this type of transistor is usually associated with. It has features such as low noise operation, high gain linearity, and long life. Lastly, its two base pins, two collector pins and two emitter pins make it an ideal choice for many low-level signal amplification circuits.

2SC51210P	Panasonic El...	0.0 $	1000	TRANS NPN 400V 0.07A TO-1...
2SC57390P	Panasonic El...	0.0 $	1000	TRANS NPN 60V 3A TO-220DB...
2SC559200L	Panasonic El...	0.0 $	1000	TRANS NPN 15V 2.5A MINI 3...
2SC57880QA	Panasonic El...	0.0 $	1000	TRANS NPN 60V 3A MT-4Bipo...
2SC536300L	Panasonic El...	0.0 $	1000	TRANS NPN 6V 0.03A SS-MIN...
2SC584500L	Panasonic El...	--	1000	TRANS NPN 50V 0.1A MINI-3...
2SC584600L	Panasonic El...	--	1000	TRANS NPN 50V 0.1A SSSMIN...
2SC5060TV2M	ROHM Semicon...	0.0 $	1000	TRANS NPN DARL 90V 1A ATV...
2SC5731T100Q	ROHM Semicon...	0.0 $	1000	TRANS NPN 30V 2A SOT-89Bi...
2SC5731T100R	ROHM Semicon...	0.0 $	1000	TRANS NPN 30V 2A SOT-89Bi...
2SC5732TLQ	ROHM Semicon...	0.0 $	1000	TRANS NPN 30V 5A SOT-428B...
2SC59930P	Panasonic El...	0.0 $	1000	TRANS NPN 180V 1.5A TO-22...
2SC59930Q	Panasonic El...	0.0 $	1000	TRANS NPN 180V 1.5A TO-22...
2SC581300L	Panasonic El...	0.0 $	1000	TRANS NPN 80V 1.5A MINI-3...
2SC5265LS-1HX	ON Semicondu...	0.0 $	1000	TRANSISTOR RFBipolar (BJT...
2SC5171(LBS2MATQ,M	Toshiba Semi...	0.0 $	1000	TRANS NPN 2A 180V TO220-3...
2SC5171(ONK,Q,M)	Toshiba Semi...	0.0 $	1000	TRANS NPN 2A 180V TO220-3...
2SC5171,MATUDQ(J	Toshiba Semi...	0.0 $	1000	TRANS NPN 2A 180V TO220-3...
2SC5171,ONKQ(J	Toshiba Semi...	0.0 $	1000	TRANS NPN 2A 180V TO220-3...
2SC5171,Q(J	Toshiba Semi...	0.0 $	1000	TRANS NPN 2A 180V TO220-3...
2SC5172(YAZK,Q,M)	Toshiba Semi...	0.0 $	1000	TRANS NPN 5A 400V TO220-3...
2SC5201(T6MURATAFM	Toshiba Semi...	0.0 $	1000	TRANS NPN 50MA 600V TO226...
2SC5201(TE6,F,M)	Toshiba Semi...	0.0 $	1000	TRANS NPN 50MA 600V TO226...
2SC5201,F(J	Toshiba Semi...	0.0 $	1000	TRANS NPN 50MA 600V TO226...
2SC5201,T6F(J	Toshiba Semi...	0.0 $	1000	TRANS NPN 50MA 600V TO226...
2SC5201,T6MURAF(J	Toshiba Semi...	0.0 $	1000	TRANS NPN 50MA 600V TO226...
2SC5459(TOJS,Q,M)	Toshiba Semi...	0.0 $	1000	TRANS NPN 3A 400V TO220-3...
2SC5549,T6F(J	Toshiba Semi...	0.0 $	1000	TRANS NPN 1A 400V TO226-3...
2SC5930(T2MITUM,FM	Toshiba Semi...	0.0 $	1000	TRANS NPN 1A 600V SC71Bip...
2SC5930(TPF2,F,M)	Toshiba Semi...	0.0 $	1000	TRANS NPN 1A 600V SC71Bip...
2SC5053T100Q	ROHM Semicon...	--	1000	TRANS NPN 50V 1A SOT-89Bi...
2SC5001TLQ	ROHM Semicon...	--	1000	TRANS NPN 20V 10A SOT-428...
2SC5659T2LN	ROHM Semicon...	0.06 $	1000	TRANS NPN 25V 0.05A VMT3B...
2SC5964-S-TD-E	ON Semicondu...	0.07 $	1000	TRANS NPN 50V 3ABipolar (...
2SC5729T106Q	ROHM Semicon...	0.07 $	1000	TRANS NPN 30V 0.5A SC70Bi...
2SC5729T106R	ROHM Semicon...	0.07 $	1000	TRANS NPN 30V 0.5A SC70Bi...
2SC5865TLQ	ROHM Semicon...	0.08 $	1000	TRANS NPN 60V 1A TSMD3Bip...
2SC5865TLR	ROHM Semicon...	--	1000	TRANS NPN 60V 1A TSMD3Bip...
2SC5706-H	ON Semicondu...	0.19 $	1000	TRANS NPN 50V 5A TPBipola...
2SC5916TLQ	ROHM Semicon...	0.0 $	1000	TRANS NPN 30V 2A TSMT3Bip...