Allicdata Part #: | 2SC5086-YLFTR-ND |
Manufacturer Part#: |
2SC5086-Y,LF |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS RF NPN 12V 1MHZ SSM |
More Detail: | RF Transistor NPN 12V 80mA 7GHz 100mW Surface Moun... |
DataSheet: | 2SC5086-Y,LF Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.05380 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 7GHz |
Noise Figure (dB Typ @ f): | 1dB @ 500MHz |
Gain: | -- |
Power - Max: | 100mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 20mA, 10V |
Current - Collector (Ic) (Max): | 80mA |
Operating Temperature: | 125°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | SSM |
Description
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<p>The 2SC5086-Y,LF is a type of Bipolar Junction Transistor (BJT) that is specifically designed for use in radio frequency (RF) applications. It is a 2SC5086-Y type structure with a lead frame (LF) package that is perfect for such applications. The transistor is a NPN type, usually used as an amplifier in electronic circuits that require a low-noise, high-gain performance.</p><p>The 2SC5086-Y,LF is widely used in audio and low-power RF amplifier stages, where it is known for its excellent linearity and good noise figure. This device can also be used for simple switching applications and, thanks to its wide frequency range, can be employed in applications that need to modulate signals over a wide range.</p><p>In order to understand the operation of the 2SC5086-Y,LF, it is necessary to first understand the fundamentals of bipolar junction transistors. The device is comprised of three P-N junctions, arranged in either a NPN or PNP configuration, connected together to form a three-terminal device. In an NPN BJT, the middle junction is a P-N junction between the Collector and Base terminals, and the other two junctions are between the Base and Emitter terminals. This junction arrangement creates a layer of low resistance material between the Base and Emitter terminals.</p><p>The operation of an NPN transistor is based on the principle of negative feedback, whereby the current flowing through the Collector-Emitter terminal (I<sub>E</sub>) is regulated by the voltage applied to the Base (V<sub>B</sub>). When the voltage applied to the Base increases, it encourages the flow of electrons in the Base-Emitter junction, which in turn increases the Collector current, which is regulated by the amount of voltage applied to the Base.</p><p>As far as RF applications are concerned, the 2SC5086-Y,LF is a good choice for use in audio and low-power amplifiers due to its low-noise performance and wide frequency range. The device is well suited for use in circuits that need to modulate signals, as it is able to provide good linearity over a wide frequency range. The device is also known for its good noise figure, which makes it a good choice for use in audio amplifier applications.</p><p>In conclusion, the 2SC5086-Y,LF is a type of BJT that is designed for use in RF applications. It is a low-noise, high-gain transistor that is capable of providing good linearity and good noise figure over a wide frequency range. It is well suited for use in audio and RF amplifier applications as well as in circuits that need to modulate signals over a wide range.</p>The specific data is subject to PDF, and the above content is for reference
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