2SC555600L

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	80mA
Voltage - Collector Emitter Breakdown (Max):	10V
Vce Saturation (Max) @ Ib, Ic:	--
Current - Collector Cutoff (Max):	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	110 @ 20mA, 8V
Power - Max:	300mW
Frequency - Transition:	6GHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	Mini3-G1
Base Part Number:	2SC5556

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2SC555600L is a transistor used in a variety of applications. Its primary function is to amplify an electrical signal. It is an NPN bipolar junction transistor (BJT) and can be used to switch electrical signals or enable an electrical load to turn on or off. It is also suitable for use in audio and power amplification, voltage regulation, and other applications where a medium power transistor is needed.

Background of 2SC555600L

The 2SC555600L is a single, low voltage voltage amplifier transistor from the 2SC555600L family. The 2SC555600L family includes a range of different transistors that are used in varying applications and provide a wide range of power, current and voltage requirements. This family of transistors is typically used in low voltage and medium power applications. The family includes the 2SC555600L, 2SC555700L, 2SC555800L, and 2SC555900L transistors.

Working Principle of 2SC555600L

Transistors, including the 2SC555600L, work through four basic modes of operation: forward active, reverse active, forward saturation, and reverse saturation. In the forward active mode, the base-emitter junction is forward biased. In this mode, current can flow from the emitter to the collector, and the transistor will amplify the current. In the reverse active mode, the base-emitter junction is reverse biased. In this mode, the current from the collector to the emitter is blocked, thus preventing the transistor from amplifying the current. In the forward saturation mode, the base-emitter junction is forward biased and the transistor is saturated, meaning the current between the collector and the emitter is larger than the current between the base and the emitter. In this state, the current is saturated and the transistor will not amplify the current. In the reverse saturation mode, the base-emitter junction is reverse biased and the current from the collector to the emitter is blocked again.

Application Field of 2SC555600L

The 2SC555600L transistor is primarily used in audio and power amplification, voltage regulation, and other applications where a medium power transistor is needed. It is also commonly used in high frequency amplifier circuits, as well as other applications including high speed switching, switching speed regulation, and logic operations. It is also used for low noise purposes. It is also used for amplifier applications such as pre-amplifier, driver, and power amplifier stages. In addition, the 2SC555600L transistor is also suitable for use in other applications, like microwave circuits and high frequency switching. It is also used in integrated circuits (ICs) and solid-state devices. Its high current gain, high voltage breakdown, and low input capacitance make it a suitable choice for modern electronic applications.In conclusion, the 2SC555600L transistor is a single NPN bipolar junction transistor used in a variety of applications. It operates through the four basic modes of operation. It is used primarily in audio and power amplification, voltage regulation, and other applications where a medium power transistor is required. It is also suitable for use in microwave circuits, high frequency switching, and integrated circuits.

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