Allicdata Part #: | 2SC5347AF-TD-EOSTR-ND |
Manufacturer Part#: |
2SC5347AF-TD-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN BIPO HI FREQ PCP |
More Detail: | RF Transistor NPN 12V 150mA 4.7GHz 1.3W Surface Mo... |
DataSheet: | 2SC5347AF-TD-E Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 4.7GHz |
Noise Figure (dB Typ @ f): | 1.8dB @ 1GHz |
Gain: | 8dB |
Power - Max: | 1.3W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 135 @ 50mA, 5V |
Current - Collector (Ic) (Max): | 150mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | PCP |
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2SC5347AF-TD-E is a RF complementary bipolar transistor used in high frequency amplifier applications. It features a wide frequency range, high gain and high power dissipation, making it suitable for a variety of different applications. Its wide frequency range means that it can be used in both low frequency and high frequency applications.
2SC5347AF-TD-E application field
2SC5347AF-TD-E is mainly used in RF amplifier circuits. It is typically used in electronic communication devices such as base stations, repeaters, car navigation systems, wireless communication systems and satellite communication systems. The maximum drain-source voltage of the device is 60V, offering ultimate reliability and stability in many different applications.
2SC5347AF-TD-E is also used in automotive electronics, where its high transponder power allows it to provide unmatched car navigation performance. It is also used in marine electronics, where its excellent resistance to jamming and superior automatic control capabilities make it an ideal choice.
2SC5347AF-TD-E working principle
2SC5347AF-TD-E is a type of bipolar transistor, which uses the principles of electrical current and voltage to amplify, or increase, the signal power. It is composed of three junctions and a central base, with each junction playing an important role in providing amplification.
The emitter junction is the negative part of the transistor, and works to supply electrons to the base. The collector junction is the positive part of the transistor, and works to collect electrons from the base. The base junction is where the amplification occurs. It works to control the flow of electrons between the emitter and collector junctions, varying the current between them depending on the signal voltage.
Typically, as the voltage at the base increases, the conduction from the emitter to collector junctions increases as well. This results in increased signal power, making it possible for a relatively small input signal to be amplified to a much larger signal.
Conclusion:
2SC5347AF-TD-E is a versatile RF complementary bipolar transistor with excellent features and characteristics. It is mainly used in RF amplifier circuits, automotive electronics and marine electronics, and its working principle is based on the principles of electrical current and voltage.
Overall, 2SC5347AF-TD-E is an excellent choice for a variety of applications, making it an ideal choice for device manufacturers and design engineers.
The specific data is subject to PDF, and the above content is for reference
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