2SC5865TLR Allicdata Electronics
Allicdata Part #:

2SC5865TLR-ND

Manufacturer Part#:

2SC5865TLR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS NPN 60V 1A TSMD3
More Detail: Bipolar (BJT) Transistor NPN 60V 1A 250MHz 500mW S...
DataSheet: 2SC5865TLR datasheet2SC5865TLR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V
Power - Max: 500mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Supplier Device Package: TSMT3
Description

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2SC5865TLR Application Field and Working Principle

The 2SC5865TLR is a NPN silicon transistor manufactured by Toshiba Semiconductor Corporation classified under the Transistors – Bipolar (BJT) – Single category. It consists of three layer of semiconductor material, namely P-type silicon, N-type silicon and N-type material. In the P-type silicon, majority carriers are holes while minority carriers are electrons. The N-type silicon is doped with the holes and the N-type material is doped with the electrons. When positive voltage is applied to the P-type silicon, the majority carriers (holes) are attracted to the N-type silicon, while the minority carriers (electrons) are attracted to the N-type material. This flow of current creates a circuit.

The 2SC5865TLR is primarily used in amplification and switching applications. In amplifying applications, the transistor is used to increase the voltage signals coming from the input, thereby creating a stronger signal for the output. The 2SC5865TLR is also used for current amplification, where it is used to increase the current of the input signal for the output.

In switching applications, the transistor acts as a relay that is used to switch between two outputs on the same device. It works by creating an electrical switch that allows one output to be turned on while the other is still off. The transistor acts like a virtual switch that is triggered by the input signal, thereby allowing the switch to be opened or closed depending on the input signal. In effect, the 2SC5865TLR can be used to control the direction of current flow.

Like other semiconductors, the 2SC5865TLR has a working principle based on the movement of electrons and holes. In transistors, current is controlled and regulated by the movement of electrons and holes between two PN junction points. When the input voltage is relevant to the transistor’s base voltage, it triggers a reverse bias, which causes the electrons and holes to be pushed away from the PN junction points. The reverse bias prevents current flow through the transistor, thus suppressing any current through the transistor.

When the input voltage exceeds the base voltage, the transistor becomes forward biased, which causes the electrons and holes to be attracted to the PN junction points. The forward bias enables the current to flow through the transistor and to the output, thus creating a signal. The magnitude of the signal depends on the voltage difference between the input and base voltage, which is known as the Transistor Gain.

The 2SC5865TLR is a versatile transistor that is suitable for a wide range of applications. Its ability to amplify and switch signals makes it ideal for many control systems such as noise cancellation, signal rectification, signal switching, and current regulation. Its efficient power consumption makes it ideal for use in battery operated applications, such as wireless headsets, remote controls, and consumer electronics. In addition, its wide operating temperature range and its low cost make it an attractive choice for industrial use.

The specific data is subject to PDF, and the above content is for reference

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