2SC5085-Y(TE85L,F) Allicdata Electronics

2SC5085-Y(TE85L,F) Discrete Semiconductor Products

Allicdata Part #:

2SC5085-Y(TE85LF)TR-ND

Manufacturer Part#:

2SC5085-Y(TE85L,F)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANSISTOR NPN MM USM
More Detail: RF Transistor NPN 12V 80mA 7GHz 100mW Surface Moun...
DataSheet: 2SC5085-Y(TE85L,F) datasheet2SC5085-Y(TE85L,F) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 11dB ~ 16.5dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM
Description

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2SC5085-Y (TE85L,F) transistor is a high-performance and high-frequency NPN silicon epitaxial planar transistor. Both its application field and working principle are important for circuit design and performance. This article will discuss both these aspects in detail.

Application Field

The 2SC5085-Y (TE85L,F) is a type of RF bipolar transistor, which is popularly used in audio amplifier, video power amplifier, video driver, and IF amplifier circuits. It is also suitable for use in a wide variety of wide band, push-pull, and low noise amplifier circuits. In addition, it can also be used in the field of RF communication to provide low noise amplification.

The 2SC5085-Y (TE85L,F) has a high fT (transition frequency), low noise figure, and high output power capability. As a result, it can be used in a wide variety of applications including microwave radio communications, aerospace communications, and even defense applications.

The 2SC5085-Y (TE85L,F) is also suitable for digital applications such as modulators, demodulators, power amplifiers, and even digital oscillators. Because of its low noise figure and high current gain, it can be used in a variety of amplifying applications.

Working Principle

The 2SC5085-Y (TE85L,F) is a bipolar transistor that is composed of three regions of opposite N-type and P-type material. When a small voltage is applied to the transistor base from an external source, a current is created between the emitter and collector. This current is then amplified as it passes through the transistor.

The 2SC5085-Y (TE85L,F) has a high current gain due to its NPN structure and epitaxial layer design. This is responsible for its low noise figure and high transconductance. Furthermore, its large physical size also enables the transistor to achieve a higher current gain than other types of transistors.

The 2SC5085-Y (TE85L,F) also has a high breakdown voltage and can handle large voltage swings without showing any signs of damage. It also has a high collector-emitter capacitance that helps in reducing the overall parasitic capacitance of the circuit.

In summary, the 2SC5085-Y (TE85L,F) is a high performance, high frequency bipolar NPN Silicon Epitaxial Planar transistor with a wide range of applications, primarily in the field of RF communication and digital oscillators. It has a high current gain, low noise figure, and high breakdown voltage.

The specific data is subject to PDF, and the above content is for reference

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