Allicdata Part #: | 2SC5231A-9-TL-E-ND |
Manufacturer Part#: |
2SC5231A-9-TL-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN BIPO 70MA 10V SMCP |
More Detail: | RF Transistor NPN 10V 70mA 7GHz 100mW Surface Moun... |
DataSheet: | 2SC5231A-9-TL-E Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 10V |
Frequency - Transition: | 7GHz |
Noise Figure (dB Typ @ f): | 1dB @ 1GHz |
Gain: | 12dB ~ 8.5dB @ 1GHz |
Power - Max: | 100mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 135 @ 20mA, 5V |
Current - Collector (Ic) (Max): | 70mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, Gull Wing |
Supplier Device Package: | SMCP |
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The 2SC5231A-9-TL-E is a bipolar junction transistor (BJT) used for radio frequency (RF) applications. It has an NPN structure and operates up to 8 GHz. This BJT is used in RF amplifiers, oscillators, and mixers.
In its most basic application, the 2SC5231A-9-TL-E is used as a switching device. When a small current is applied to the gate of the transistor, it can either turn fully on or fully off—this is known as switching. It can also be used to amplify a signal, meaning that a small signal can be used to control a larger one. This is done by using the transistor to control a larger current flow to achieve the desired amplitude of output.
The 2SC5231A-9-TL-E utilizes several working principles in order to operate. It is a three-terminal device, with the base, collector and emitter all being used to control the operation of the transistor. The gate terminal is used to control the operation of the device, meaning that the current flow through the device can be changed depending on the input applied to the gate terminal. This input can also be in the form of a voltage.
The current flow through the transistor is also affected by the collector-base voltage. When the voltage increase, the collector current also increases. This principle is used to amplify the signal, meaning that a small change in the collector-base voltage can have a large effect on the collector current.
Another working principle of the 2SC5231A-9-TL-E is the transistor’s ability to become saturated. When the transistor is saturated, all current flow is from the collector to the emitter. This can be used as an on/off switch, as the current induced to flow through the transistor can be regulated.
The field-effect of the transistor, known as the current gain, affects the current flow through the transistor. This current gain is given by the ratio of the current in the collector to the current in the emitter. The higher this ratio, the less current needed to be applied to the gate for a given output.
The 2SC5231A-9-TL-E is an ideal device for RF applications and has a wide range of uses. Its switching capabilities, field-effect and saturation characteristics make it an excellent choice for radio frequency amplification, oscillators and mixers. In addition, it can be used as a switch when used in a low current environment.
The specific data is subject to PDF, and the above content is for reference
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