| Allicdata Part #: | 2SC5455-A-ND |
| Manufacturer Part#: |
2SC5455-A |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | CEL |
| Short Description: | RF TRANSISTOR NPN SOT-143 |
| More Detail: | RF Transistor NPN 6V 100mA 12GHz 200mW Surface Mou... |
| DataSheet: | 2SC5455-A Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Strip |
| Part Status: | Obsolete |
| Transistor Type: | NPN |
| Voltage - Collector Emitter Breakdown (Max): | 6V |
| Frequency - Transition: | 12GHz |
| Noise Figure (dB Typ @ f): | 1.5dB @ 2GHz |
| Gain: | 10dB |
| Power - Max: | 200mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 75 @ 30mA, 3V |
| Current - Collector (Ic) (Max): | 100mA |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-253-4, TO-253AA |
| Supplier Device Package: | -- |
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The 2SC5455-A is a high frequency transistor that is part of the RF (Radio Frequency) Bipolar Junction Transistor (BJT) family. It is a surface mount device that comes in an SOT-23 package and provides excellent performance in high frequency circuits. The device is designed for applications such as amplifiers, receivers, transmitters, switching circuits, and oscillators.
The 2SC5455-A is a NPN type transistor, composed of a base, emitter, and collector. It is capable of operating at high frequencies up to 4 GHz, making it well suited for various radio frequency (RF) applications. The device has a low noise figure and high gain, making it especially suitable for use in low power amplifier designs. The device is capable of providing gain up to 24 dB at 4 GHz and has a power output of up to 20 W.
The working principle of the 2SC5455-A transistor is similar to other BJT transistors. When the device is forward biased, current flows from the base to the emitter, which in turn increases the current flow from the collector to the emitter, creating a larger current gain. The device\'s base-emitter junction acts as a controlled variable voltage source. When the base voltage increases, the transistor\'s collector current increases as well, resulting in an amplification of the input signal. This amplified signal is then used to drive the output of the circuit.
The 2SC5455-A transistor is well suited for use in low noise amplifier (LNA) applications. It is capable of providing gain up to 24 dB at 4 GHz and offers a very high frequency response. The device is also well suited for applications such as receivers and transmitters due to its high gain and low noise figure. Additionally, the device is suitable for use in oscillators, transceivers, and other RF applications due to its high frequency operation.
The 2SC5455-A transistor is a great choice for any RF application that requires a high frequency device with low noise and high power output. It can be used in a variety of applications, from low noise amplifiers to transmitters, receivers, oscillators, and transceivers. This versatile device is an excellent choice for any RF application.
The specific data is subject to PDF, and the above content is for reference
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2SC5455-A Datasheet/PDF