2SC5501A-4-TR-E

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	10V
Frequency - Transition:	7GHz
Noise Figure (dB Typ @ f):	1dB @ 1GHz
Gain:	13dB
Power - Max:	500mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	90 @ 20mA, 5V
Current - Collector (Ic) (Max):	70mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-82A, SOT-343
Supplier Device Package:	4-MCP

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2SC5501A-4-TR-E is a high-performance NPN transistor used in a variety of applications, such as RF power amplifying, oscillators, low-noise amplifiers, RF switching, and broadband amplifiers. With its high power gain, wide operating frequency range, low noise figure, and good linearity performance, it is an ideal choice for a variety of radio frequency applications.The 2SC5501A-4-TR-E is a high-power bipolar-junction transistor (BJT) designed for use in RF amplifiers and other high-frequency applications. It is a type of NPN (negative-positive-negative) BJT, meaning that its collector is connected to its base, while its emitter is connected to the positive voltage. Positive voltage is supplied to the collector-emitter junction, which controls the current flowing through the transistor. This type of transistor is often referred to as an RF BJT.The 2SC5501A-4-TR-E has a high power gain of up to 12 dB at 40 MHz. Its wide frequency range spans from 50 MHz to 500 MHz, making it an ideal choice for a variety of radio-frequency applications. In addition, its low noise figure of 0.4 dB at 40 MHz and its good linearity performance make it a great choice for low-noise amplifying applications.The 2SC5501A-4-TR-E has several unique features that make it a great option for RF amplifiers and other applications. Its shielding feature can reduce noise levels, its self-biasing function can reduce the need for additional matching circuits, and its wide operating temperature range and low bias current requirement can make the transistor work reliably in a variety of conditions.The working principle of the 2SC5501A-4-TR-E is quite simple. Current flows through the transistor in steady state, and is controlled by the applied voltage. Its collector is connected to its base, while its emitter is connected to the positive voltage. As the applied voltage is increased, more current flows through the transistor, resulting in increased power gain. Conversely, when the applied voltage is decreased, less current flows through the transistor, resulting in decreased power gain.The 2SC5501A-4-TR-E offers high power gain, wide operating frequency range, low noise figure, and good linearity performance, making it an ideal choice for RF power amplifying, oscillators, low-noise amplifiers, RF switching, and broadband amplifiers. It is an easy-to-use, reliable, and cost-effective solution for a variety of radio frequency applications.

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