2SC6017-E

Series:	--
Packaging:	Bulk
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	10A
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	360mV @ 250mA, 5A
Current - Collector Cutoff (Max):	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 1A, 2V
Power - Max:	950mW
Frequency - Transition:	200MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	TP

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Introduction

The 2SC6017-E, known as a Single Bipolar Junction Transistor (BJT), is commonly used in various applications due to its extremely versatile nature. It is often used in both low and high-power applications and can be found in a range of products. This article will discuss the application field and working principle of the 2SC6017-E.

Application Field

One of the most common uses of the 2SC6017-E is in low power applications such as digital signal processing polishing and weak signal filtering. It is also used in high power applications such as power amplifiers and high voltage rectification products.The 2SC6017-E is suitable for voltage and current amplifications and has a high cutoff frequency. It also has a higher thermal stability compared to other types of transistors and can operate up to temperatures of 125 degrees Celsius. This makes it suitable for applications that require reliability even in harsh environments.It can be used in both low power and high power amplifier products, wave filters, and frequency modulators. It is also commonly used in radio, automotive, and power amplifier circuits, as well as in audio and modulating equipments.

Working Principle

The 2SC6017-E operates by selectively modifying and controlling the flow of current between two terminals of a circuit. It is built on a silicon substrate and consists of three terminals – Collector, Base, and Emitter.The 2SC6017-E works on the principle of electrical input and output, where a current is applied to the Base and output is taken from the Collector. The voltage applied to the Base determines the level of current passing through the transistor. The current flowing through the Collector is typically larger than the applied current at the base.The base-emitter parasitic diode formed in a direction of this transistor also helps it to control the current flow. This diode acts as a limiter and opens or closes the path between the Emitter and Base. This in turn regulates the current flow between the two terminals.

Conclusion

In conclusion, the 2SC6017-E is an extremely versatile single bipolar junction transistor (BJT) which is capable of operating in both low and high-power applications. It is primarily used in sound applications and in low power digital signal processing and weak signal filtering. It works on the principle of electrical input and output and makes use of a base-emitter parasitic diode for current flow control. It operates up to temperatures of 125 degrees Celsius, making it ideal for harsh environmental conditions.

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