Allicdata Part #: | 2SC6094-TD-EOSTR-ND |
Manufacturer Part#: |
2SC6094-TD-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 60V 3A PCP |
More Detail: | Bipolar (BJT) Transistor NPN 60V 3A 390MHz 1.3W Su... |
DataSheet: | 2SC6094-TD-E Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 120mV @ 100mA, 1A |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 300 @ 100mA, 2V |
Power - Max: | 1.3W |
Frequency - Transition: | 390MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | PCP |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
2SC6094-TD-E is a type of single bipolar junction transistor (BJT). BJTs are three terminal active semiconductor devices that have very important uses in many electronics applications, such as amplifiers and switches. 2SC6094-TD-E is especially designed for a special purpose, as it is tailored for industrial applications and has a maximum collector-emitter voltage of 120 V.
2SC6094-TD-E has a cylindrical form factor with a diameter of 2.54 mm. This small size makes it suitable for applications where space constraints are important. Furthermore, it is a surface-mounted device that minimizes labor for installation and can be used in a high density mounting system. Its packaging is also designed for better performance and superior heat dissipation.
In terms of its electrical characteristics, 2SC6094-TD-E has a maximum collector power dissipation of 200 mW, a maximum collector-emitter voltage of 120 V, a minimum current gain at IC=100 mA of 200, and a maximum transition frequency of 2 GHz. This type of transistor can also handle collector currents of up to 2A and has a dielectric withstanding voltage between the collector and emitter of 250 VAC.
The principle of operation of the 2SC6094-TD-E is simple and relies on the modification of the flow of charge carriers between two regions within a semiconductor material. This type of transistor utilizes the effects from a base-emitter junction, which is made from a doped semiconductor material. This junction remains forward biased. The number of charge carriers going through the base region is higher when the collector-emitter voltage is increased. Therefore, this change in voltage results in a change of the current that is flowing through the collector-emitter path. As a result, the voltage level is modulated according to the input. This modulation results in the amplification of an electronic signal, which is the primary function of 2SC6094-TD-E.
2SC6094-TD-E has great utility in industrial applications. For instance, it can be used in power amplifier stages and can also be utilized for switching applications. It is also used in motor drives, medical electronics, power converters, motor control systems, and various other control circuits. Due to its high-end characteristics and its low price, it is a cost-efficient option for various applications. In short, the 2SC6094-TD-E is a reliable transistor for various industrial applications.
The specific data is subject to PDF, and the above content is for reference
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