Allicdata Part #: | 2SC6082-EPN-1E-ND |
Manufacturer Part#: |
2SC6082-EPN-1E |
Price: | $ 1.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 50V 15A |
More Detail: | Bipolar (BJT) Transistor NPN 50V 15A 195MHz 2W Thr... |
DataSheet: | 2SC6082-EPN-1E Datasheet/PDF |
Quantity: | 350 |
1 +: | $ 1.03950 |
10 +: | $ 0.92862 |
100 +: | $ 0.72419 |
500 +: | $ 0.59826 |
1000 +: | $ 0.47231 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 15A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 375mA, 7.5A |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 330mA, 2V |
Power - Max: | 2W |
Frequency - Transition: | 195MHz |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F-3SG |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
2SC6082-EPN-1E is a NPN Transistor type of electronic component. It means it’s a type of bipolar junction transistor, i.e. a single layer NPN transistor with two terminals – an emitter and a collector. This type of transistors usually has a low base-emitter voltage, making them suitable for low-power low-voltage applications.
The 2SC6082-EPN-1E transistors are widely used in a range of consumer and industrial applications, such as radios, amplifiers, audio circuits, switching systems, and microcontrollers. The transistor can be used in both common emitter and common collector configurations. It has a maximum collector current of 300 mA, a maximum collector-emitter voltage of 60 V, and a maximum power dissipation of 600 mW.
The working principle of the 2SC6082-EPN-1E transistors is based on the principle of a bipolar junction transistor (BJT). When current flows through a BJT, it is split into two parts. The first part is called the base current, which sets up a base-emitter region. The second part is the collector current, which passes through the base-collector region. As a result, the transistor can be used to control the current flow from the collector to the emitter.
The 2SC6082-EPN-1E transistors are normally used in common emitter and common collector configurations. In a common emitter configuration, the transistors act as a switch and the current flows between the collector and the emitter, as controlled by the base current. In a common collector configuration, the transistor acts as an amplifier and the base current controls the voltage gain.
The 2SC6082-EPN-1E transistors are capable of high switching speeds, making them suitable for high-speed applications such as micro controllers. They also have low noise and high reliability, making them ideal for use in low-power and low-noise circuits. They are available in both through-hole and surface mount packages, making them suitable for a wide range of applications.
The 2SC6082-EPN-1E transistors can be operated in either saturation or cutoff modes, depending on the biasing of the transistor. The saturation mode is used to switch the transistor on, and the cutoff mode is used to switch it off. This makes it possible to use the transistors for a variety of applications, such as controlling current or voltage gains.
Overall, the 2SC6082-EPN-1E transistors are a popular choice for use in a range of consumer and industrial applications due to their low power and low voltage characteristics, high switching speeds, high reliability, and low noise. They are versatile and can be used in common emitter and common collector configurations and be operated in either saturation or cutoff mode. They are also available in both through-hole and surface mount packages, making them suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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