2SC6145A

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2SC6145A is a type of Bipolar Junction Transistor (BJT), which is specially designed for use in low-noise analog and digital applications. It is a single-stage, low-power NPN transistor, with an excellent low-noise performance and a wide dynamic range. This makes the 2SC6145A an ideal choice for use in amplifiers, mixers, switching and oscillators.

The 2SC6145A has a collector-emitter Voltage of 40V and a collector-base voltage of 40V, making it well suited for use in high-voltage circuits. The maximum emitter-base voltage is 5V, while the maximum collector-base current is 8A. This transistor has a higher collector current than most of its competitors, making it suitable for use in high-power circuits. The 2SC6145A also has excellent hFE and current gain characteristics, which make it well suited for use in applications that require precise control over power and voltage.

The 2SC6145A also has a wide range of applications. It can be used in audio amplifiers, radio transmitters, low-noise amplifiers, signal switching circuits, audio and video filters, voltage regulators, and more. The 2SC6145A also has several high-performance features, such as excellent linearity and low-noise performance. Additionally, this device is also well suited for power management, and its low power consumption makes it ideal for use in mobile devices.

When it comes to understanding the working principle of the 2SC6145A, it is important to first understand the basics of BJT transistors. In BJT transistors, current flow is regulated by three regions. The Base region serves as the input region and is made up of a small area between two larger contact regions. When current is passed through the Base region, some of it will pass between the two larger contact regions, which then produces a current gain between the Base and Collector regions.

The collector and emitter regions have a very high resistance. To regulate the flow of current between these two regions, the gate region is used, which creates a control voltage across the gate-collector region. When the base current is increased, the voltage created between the Gate and Collector regions decreases, which restricts the current flow between the Collector and Emitter regions. As a result, the amount of current flowing through the collector-emitter region can be regulated.

In summary, the 2SC6145A is an ideal choice for low-noise analog and digital applications. This transistor features a high collector current, excellent hFE and current gain characteristics, and a wide range of applications. Additionally, the device also has a low power consumption and can be used in mobile applications. Understanding how BJT transistors work is also essential for understanding how the 2SC6145A works. By understanding the basics of how BJT transistors work, users can better optimize the performance of their circuit design with the 2SC6145A.

The specific data is subject to PDF, and the above content is for reference