2SC6011A Allicdata Electronics
Allicdata Part #:

2SC6011A-ND

Manufacturer Part#:

2SC6011A

Price: $ 3.44
Product Category:

Discrete Semiconductor Products

Manufacturer: Sanken
Short Description: TRANS NPN 230V 15A TO3P
More Detail: Bipolar (BJT) Transistor NPN 230V 15A 20MHz 160W T...
DataSheet: 2SC6011A datasheet2SC6011A Datasheet/PDF
Quantity: 1000
1 +: $ 3.13110
10 +: $ 2.79468
25 +: $ 2.51546
100 +: $ 2.29175
250 +: $ 2.06819
500 +: $ 1.85578
1000 +: $ 1.56511
Stock 1000Can Ship Immediately
$ 3.44
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 230V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 3A, 4V
Power - Max: 160W
Frequency - Transition: 20MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Description

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2SC6011A is a type of bipolar transistor, also known as a BJT. Specifically, it is a single transistor which means it has two transistors. The number 6010A refers to the package type, while 2S refers to the silicon type.

An application field of the 2SC6011A is power management, where it can be used in several power supply systems. It is particularly suitable for field effect types, high efficiency power converters, and switch power supplies. Other application fields for this BJT include high performance operational amplifiers, voltage regulators, and high frequency communication circuits.

The basic working principle behind transistors is mirroring. Transistors are composed of three layers of semiconductor material, one of which is a very thin, highly reflective layer. This thin, mirrored layer works as a gate between the other two layers and the external circuit. As current is applied to the gate, the internal electrons move to form a charge. This creates an electric field, which attracts or repels electrons within the external circuit.

In the case of a 2SC6011A, the mirrored layer is made up of two layers, with one layer carrying negative charges and the other carrying positive charges. When current is applied to the gate, these two layers become polarized in opposite directions. This means that it creates a large capacitance, which amplifies the input voltage and switches the output between high and low voltage levels. The 2SC6011A can also be used as an amplifying or switching device.

The 2SC6011A has a wide range of features, including high-speed, low noise and a high-power output capability. It has a very low saturation voltage, making it ideal for portable applications such as laptop computers. Furthermore, it can operate up to a frequency of 5GHz, making it suitable for use in high-frequency communication and other systems. Its leakage current is also very low, allowing it to be used in high-precision systems.

The 2SC6011A is a versatile transistor which can be used in many applications. It is useful in power management systems, high performance operational amplifiers, voltage regulators, and high-frequency communication circuits. Its highly reflective gate, capacitance capability and low leakage current make it well suited for portable devices such as laptop computers, as well as for precision high-frequency applications.

The specific data is subject to PDF, and the above content is for reference

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