Allicdata Part #: | 2SC6017-TL-EX-ND |
Manufacturer Part#: |
2SC6017-TL-EX |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 50V 10A |
More Detail: | Bipolar (BJT) Transistor NPN 50V 10A 200MHz 950mW ... |
DataSheet: | 2SC6017-TL-EX Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 360mV @ 250mA, 5A |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 1A, 2V |
Power - Max: | 950mW |
Frequency - Transition: | 200MHz |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | 2-TP-FA |
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The 2SC6017-TL-EX is a NPN silicon epitaxial transistor in a small uni-pack package. It is part of Toshiba\'s Hybrid/Integrated/Programmable Transistor (HIP) family and offers features such as low collector to emitter saturation voltage and high DC current gain. This transistor is commonly used for applications such as power audio and radio frequency (RF) amplifiers, RF preamplifiers, and switching circuits.
The transistor operates by biasing three distinct layers of silicon within an NPN junction. This is done by securing electrons to a central layer of silicon called the “base”. The electrons in the base layer will then attract holes (or acceptors) from the emitter layer, causing current to flow through the collector when the base layer is connected to a positive voltage source. The electrons will then be pushed back to the emitter layer when the voltage source is removed and the current flow is reversed, allowing the device to switch on and off.
The device has very low collector-emitter saturation voltage, in the order of 0.2V, and high DC current gain between 20-50. This makes it ideally suited for applications which require high performance switching, such as RF preamplifiers, power amplifiers and RF receivers. The 2SC6017-TL-EX is also easily integrated into existing designs, due to its small uni-pack package, providing more compact designs.
The device is also very reliable, with no significant differences between devices made with different technologies. It is also very economical, with a cost savings of up to 50% compared to devices with the same features but of larger package size. All together, this makes the 2SC6017-TL-EX a great choice for applications that require high performance and affordability.
In conclusion, the 2SC6017-TL-EX is aNPN silicon epitaxial bipolar transistor with low collector-emitter saturation voltage and high DC current gain, which makes it suitable for applications such as power audio and radio frequency (RF) amplifiers, RF preamplifiers, and switching circuits. The device is also very reliable and economical, with a cost savings of up to 50%, making it a great choice for those on a budget.
The specific data is subject to PDF, and the above content is for reference
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