Allicdata Part #: | 2SC6082-1EOS-ND |
Manufacturer Part#: |
2SC6082-1E |
Price: | $ 0.78 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 50V 15A |
More Detail: | Bipolar (BJT) Transistor NPN 50V 15A 195MHz 2W Thr... |
DataSheet: | 2SC6082-1E Datasheet/PDF |
Quantity: | 1896 |
1 +: | $ 0.71190 |
10 +: | $ 0.63504 |
100 +: | $ 0.49493 |
500 +: | $ 0.40886 |
1000 +: | $ 0.32278 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 15A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 375mA, 7.5A |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 330mA, 2V |
Power - Max: | 2W |
Frequency - Transition: | 195MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F-3SG |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
.The 2SC6082-1E is a NPN silicon bipolar junction transistor (BJT), an electronic component used to switch and amplify electronic signals. This device is designed to be used in many types of applications, including microwave and audio frequency amplifiers, low-noise preamplifier stages, line drivers, and other equipment where low noise, high gain and wide bandwidth are desired. In addition to its impressive specifications, this device also offers a very low collector-emitter saturation voltage and higher gain than some alternative components.
The basic operating principle of a BJT is relatively straightforward. A BJT comprises three terminals, an emitter, base, and collector. These terminals are connected to a single semiconductor chip. When a voltage is applied to the base, it controls the flow of current between the emitter and collector. As the voltage changes, so too does the flow of current, with the current flowing from the collector to the emitter when the voltage on the base is larger than the voltage on the emitter.
The 2SC6082-1E has many useful features and parameters. As for its collector-emitter saturation voltage, this transistor has a very low value of 0.4V at a collector-emitter current of 1 mA. This low voltage ensures that this device can be used in a wide variety of applications where high gain is desired. The device also has a high current gain of 1000 at a collector current of 100 mA, and an equally impressive current gain of 500 at a collector current of 5 mA.
The 2SC6082-1E is also an excellent choice for applications where the utmost in low noise is desired. In addition to a low noise current gain of less than 1 nanoampere at a collector voltage of 10V, this device also has a very low noise figure of less than 0.1 decibels at a collector current of 5 mA. This low noise figure allows this device to be used in a wide variety of low-noise preamp stages and line drivers.
Finally, the 2SC6082-1E is also ideally suited for applications where a wide bandwidth is desired. The device has an fT (transition frequency) of 200 MHz at a collector current of 5 mA. In addition, this device also has an extremely high current capacitance of 2.0 pF. With such impressive specifications, this is an excellent choice for applications such as amplifier circuits that require a broad range of operation.
Overall, the 2SC6082-1E is an excellent choice for a wide variety of electronic applications. It offers a low collector-emitter saturation voltage, high current gain, low noise figure and wide bandwidth, making it an ideal choice for many types of amplifiers, preamp stages and line drivers. These features make this device an excellent choice for both commercial and consumer applications.
The specific data is subject to PDF, and the above content is for reference
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