2SC6099-E Allicdata Electronics
Allicdata Part #:

2SC6099-E-ND

Manufacturer Part#:

2SC6099-E

Price: $ 0.23
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 100V 2A TP
More Detail: Bipolar (BJT) Transistor NPN 100V 2A 300MHz 800mW ...
DataSheet: 2SC6099-E datasheet2SC6099-E Datasheet/PDF
Quantity: 1000
1000 +: $ 0.21538
Stock 1000Can Ship Immediately
$ 0.23
Specifications
Series: --
Packaging: Bulk 
Part Status: Last Time Buy
Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 165mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Power - Max: 800mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TP
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

2SC6099-E is a single bipolar junction transistor (BJT). This type of transistor has a wide range of applications in the electronics industry due to its utilization of electrons as charge carriers and its ability to switch electric currents on and off.

The working principle of the 2SC6099-E is based on injecting charge carriers into a semiconductor material, which is thermally isolated from the base material. As current is passed through the base material, it creates an electron field (or “junction field”) in the isolated semiconductor material through which electrons are injected. The electric field created between the two materials allows the transistor to “turn on” and “turn off” the current.

The 2SC6099-E is commonly used in amplifiers, linear and switched-mode power supplies, DC-DC converters, and many other applications requiring relatively high voltage and current levels. It is especially useful in applications requiring high speed and power efficiency. By utilizing a mature BJT-type device, it helps reduce overall costs by providing higher performance at a lower cost.

In addition to its wide array of applications, the 2SC6099-E offers several advantages. These include very low power dissipation, high switching speed, and high reliability. The high switching speed coupled with the low power dissipation allows for increased system efficiency, which helps reduce overall power consumption. Additionally, the high reliability of the 2SC6099-E ensures that it lasts longer in operation and is less prone to failure under demanding conditions.

This BJT-type transistor is able to provide superior performance in applications that require higher power levels, greater switching speeds, and increased efficiency. This makes it ideal for a wide range of electronics applications. It is important to note, however, that the 2SC6099-E can be sensitive to power levels, and its performance may suffer if it is not properly implemented. As such, it is important to choose the right 2SC6099-E for a given application.

The specific data is subject to PDF, and the above content is for reference

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