2SC6036G0L

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2SC6036G0L Application Field and Working Principle

The 2SC6036G0L is a high-voltage, high-gain NPN bipolar transistor manufactured by Toshiba Corporation. This transistor is suitable for use in applications such as power amplifier, switching regulator and drive circuits. It has an excellent standard gain of 700 and an excellent power dissipation capacity of up to 2 W.

Features

• High DC gain of 700
• Max. Collector current at 330 mA
• Max. Collector-base voltage of 700V
• High power dissipation capacity of up to 2 W
• Low saturation voltage of 0.5 V
• High transition frequency

Uses

2SC6036G0L transistors are widely used in various types of applications due to their excellent features. Some of the example applications are as follows:

• In power amplifiers, the transistor is used to amplify input signals with higher output power.
• It is used in switching regulator circuits for efficient conversion of power from the AC line to DC.
• It is also used in drive circuits, where the transistor is used to drive loads such as motors, solenoids and relays.
• It is used in various oscillator circuits, as its high transition frequency makes it an ideal choice.
• It is widely used in data communication circuits, where it is used to drive digital signals.

Working Principle

2SC6036G0L transistors are NPN type transistors, which use a single charge carrier injection technique in its operation. The operation of the transistor is based on the idea that charges can traverse across the base and emitter junction in both directions. When the transistor is forward biased, a voltage is applied across the base and the emitter. This causes the electrons from the emitter to be attracted to the base and pass through the base to the collector. At the same time, the collector current increases and the base current decreases, due to the base-emitter potential barrier.

The transistor also exhibits an advantage known as “Common Emitter Amplification”, where the voltage gain obtained during input is amplified and the output is a larger current. This voltage gain is determined by the current gain and is referred to as hfe, or DC current gain. The DC current gain is equal to the ratio between the collector and the emitter current. The hfe of the 2SC6036G0L is approximately 700, which makes it an ideal choice for various amplifier applications.

Conclusion

The 2SC6036G0L is a high voltage, high gain NPN bipolar transistor manufactured by Toshiba Corporation. It is suitable for various applications such as power amplifiers, switching regulators and drive circuits, due to its excellent features. The transistor exhibits an advantage known as “common emitter amplification”, where the input voltage is amplified and the output is a larger current. It has an excellent DC current gain of 700, making it an ideal choice for various amplifier applications.

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