2SC6096-TD-H

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	2A
Voltage - Collector Emitter Breakdown (Max):	100V
Vce Saturation (Max) @ Ib, Ic:	150mV @ 100mA, 1A
Current - Collector Cutoff (Max):	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	300 @ 100mA, 5V
Power - Max:	1.3W
Frequency - Transition:	300MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	PCP

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Introduction

2SC6096-TD-H is a single bipolar junction transistor (BJT) device with a high breakdown voltage and high current gain. It is a general-purpose BJT device used in a wide variety of switching, monitoring, and linear applications.

Application Field

The applications for 2SC6096-TD-H include, but are not limited to, amplifier stages, audio and video equipment, motor controls/drive circuit, automotive applications, lighting and ballasts. It can be used for high-side and low-side switching and as an adjustable current source. It features an isolation rating of 2000V and a dielectric strength of 1A/V. It is suitable for operation up to temperatures of 175°C and up to a voltage rating of 80Vdc.

Working Principle

A single BJT is a three-terminal electronic component, whereby current flows through the base and emitter terminals. The BJT works by allowing a small current to flow between the base and emitter terminals, which then causes a larger current to flow between the collector and emitter, thus allowing the BJT to amplify the signal. The width of the current flow between the emitter and collector can be controlled by the base current.To explain the operation of the 2SC6096-TD-H, let us consider its base-emitter region: When a small current flows into the base, it causes a large current to flow from the collector to the emitter. This is because the base-collector junction is reverse biased, creating an electric field. As the electric field increases, the electrons in the base-collector junction get knocked off and flow to the collector. This leads to an amplification of the current which flows from the collector to the emitter.

Conclusion

In conclusion, 2SC6096-TD-H is a single bipolar junction transistor device with a high-breakdown voltage and high current gain. It is suitable for general-purpose applications and provides a wide range of functionality. It works by allowing a small current to flow between the base and emitter, which then causes a larger current to flow between the collector and emitter, thus allowing the BJT to amplify the signal.

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