2SCR542PT100 Allicdata Electronics
Allicdata Part #:

2SCR542PT100TR-ND

Manufacturer Part#:

2SCR542PT100

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS NPN 30V 5A MPT3
More Detail: Bipolar (BJT) Transistor NPN 30V 5A 250MHz 2W Surf...
DataSheet: 2SCR542PT100 datasheet2SCR542PT100 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Power - Max: 2W
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MPT3
Description

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A common device within the semiconductor industry is the 2SCR542PT100 bipolar transistor, also known as a PBJT (P-type Bipolar Junction Transistor). The device has four leads and is manufactured using a conventional diffused junction. It is commonly used in power amplifiers, switching and oscillator circuits, as well as a range of other applications due to its high current capability and low noise.

The 2SCR542PT100 has a current gain of 250 at -25oC and is rated for a maximum DC emitter current of 3A and a maximum collector-base voltage drop of 45V. It is also rated for a maximum collector voltage of 150V and a maximum operating junction temperature of 140oC. The most common operating temperature range is -65oC to +150oC.

The device works on the principle of bipolar junction transistors. Bipolar junction transistors make use of two p-type and n-type semiconductor materials to form an electrochemical junction which can be used to amplify or switch an applied signal. The two materials are connected together by two electrodes, the collector and the emitter. The third electrode, the base, is used to modulate the current flow from the collector to the emitter. This modulation is done by applying a control voltage to the base terminal, allowing the current flow from collector to emitter to be controlled.

In the case of the 2SCR542PT100, the collector-emitter voltage drop (VCE) is dependent on the applied current and can range from 60mV at 1mA to 4V at 3A. The device has a high current gain, which helps to maintain a constant output voltage, even under heavy load, making it ideal for power amplifiers and other applications.

The device also has a low noise figure, which makes it suitable for oscillator and switching circuits. The device can also handle high frequency signals of up to 1MHz and is designed to reduce parasitic capacitance which can be detrimental to high frequency applications. The device is also designed to withstand a wide range of temperatures and has a slow thermal time constant making it suitable for use in thermal sensing applications.

Overall, the 2SCR542PT100 is a versatile device, being suitable for use in a wide range of applications such as power amplifiers, switching and oscillator circuits, thermal sensors, as well as other applications due to its high current capability, low noise, wide temperature operation range and low parasitics.

The specific data is subject to PDF, and the above content is for reference

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