Allicdata Part #: | 2SD1012F-SPA-ND |
Manufacturer Part#: |
2SD1012F-SPA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 15V 0.7A SPA |
More Detail: | Bipolar (BJT) Transistor NPN 15V 700mA 250MHz 250m... |
DataSheet: | 2SD1012F-SPA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 700mA |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Vce Saturation (Max) @ Ib, Ic: | 80mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 50mA, 2V |
Power - Max: | 250mW |
Frequency - Transition: | 250MHz |
Operating Temperature: | 125°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 3-SIP |
Supplier Device Package: | 3-SPA |
Base Part Number: | 2SD1012 |
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…The 2SD1012F-SPA is a general-purpose silicon NPN epitaxial transistor commonly used in small signal amplification and switching applications. It has a wide range of potential uses, ranging from laser diode drivers, audio amplifiers, small signal amplifiers, and switches. The 2SD1012F-SPA is a medium power BJT transistor that typically operates at low power with a current rating of 10A collector current (IC) and is designed to have only a narrow gain range (typical Β of 20 to 500). This transistor is both economically and mechanically robust, making it ideal for repeated uses in most types of applications.
The 2SD1012F-SPA device is constructed of three terminals; Base (B), Collector (C), and Emitter (E). Its design allows for current to flow between the Base-Emitter junction and Collector-Emitter junction when a voltage is applied to the Base. This flow of current is controlled by the input voltage, and this is how it amplifies the signal, making it an ideal candidate for small signal applications. The collector voltage (VC) and collector current (IC) are the two main parameters that control the voltage gain (AV) of this transistor. Because of its narrow gain range, the 2SD1012F-SPA is best suited for applications that require lower gain values, such as switching applications.
The 2SD1012F-SPA has a very low operating temperature, which makes it more reliable in many applications, and its fanske planar construction also makes it more effective at dissipating heat while also providing improved thermal impedance. This also makes it suitable for higher power applications. The device also features a high current gain (hFE) of 10 - 200, which is ideal for applications where amplification is necessary.
The 2SD1012F-SPA is also popularly known for its tolerance against electrical noise, which makes it suitable for use in radio frequency (RF) applications, such as remote control (RC) devices, radio receivers, and transmitters. The device also has a very fast switching speed, making it useful for use in logic circuits, such as for gates and multiplexers.
In conclusion, the 2SD1012F-SPA has proven to be an ideal choice for small signal and switching applications due to its economical construction, high current gain ratings, low operating temperature, and the tolerance to electrical noise which makes it suitable for RF applications. With its various features, this device is suitable for use in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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