2SD1763AE Allicdata Electronics
Allicdata Part #:

2SD1763AE-ND

Manufacturer Part#:

2SD1763AE

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS NPN 160V 1.5A TO220FP
More Detail: Bipolar (BJT) Transistor NPN 160V 1.5A 80MHz 2W Th...
DataSheet: 2SD1763AE datasheet2SD1763AE Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 2V @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 5V
Power - Max: 2W
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Description

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2SD1763AE is a kind of single bipolar junction transistor (BJT). It can be used in applications as a general-purpose amplifier, switching devices, and voltage regulation modules (VRM) on power conversion systems. This transistor consists of a PNP base and two NPN collector and emitter junctions.

The 2SD1763AE is a NPN transistor with a current gain of about 30 to 80. It has a high current gain and is suitable for on/off or linear applications circuits like amplifiers, switching devices, voltage regulators, resistors and diodes. This transistor can also be used in power conversion systems for controlling voltage, current and power.

The 2SD1763AE transistor is a NPN transistors with a current gain of about 30 to 80. It consists of a PNP base and two NPN collector and emitter junctions. The base of the transistor is connected to the gate and the emitter is connected to the drain. The collectors are also connected to the source and the base electrode is connected to the substrate.

The working principle of the 2SD1763AE transistor is based on the nature of the current flow between the collector and emitter of the transistor. The electrons that are injected into the base of the transistor are attracted to the collector due to the presence of the electric field created between the collector and base of the transistor. This creates an electric current flow between the collector and emitter and between the base and the collector.

The current gain of the 2SD1763AE transistor is determined by the electron injection into the base of the transistor. When the current is increased, the electrons become more attracted to the collector and the current gain increases. Conversely, when the current is decreased, the electrons become less attracted to the collector and the current gain decreases.

The 2SD1763AE transistor can be used in a variety of applications such as amplifiers, switching devices, voltage regulators, resistors, and diodes. The transistor can also be used in power conversion systems as a switch or a voltage regulator. The voltage regulator uses the transistor to limit the amount of current that can flow through the device.

The current gain of the 2SD1763AE transistor is determined by the electron injection into the base of the transistor. When used as an amplifier, the transistor can amplify weak signal levels to higher levels. When used as a switch, the transistor can switch between different states by regulating the current flow.

In conclusion, the 2SD1763AE is a NPN transistor with a current gain of about 30 to 80. This transistor can be used as a general-purpose amplifier, switching device, or voltage regulator in power conversion systems. The current gain is determined by the electron injection into the base of the transistor. The 2SD1763AE is a versatile transistor that is widely used in many different applications.

The specific data is subject to PDF, and the above content is for reference

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