2SD1768STPQ Allicdata Electronics
Allicdata Part #:

2SD1768STPQ-ND

Manufacturer Part#:

2SD1768STPQ

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS NPN 80V 1A SPT SC-72
More Detail: Bipolar (BJT) Transistor NPN 80V 1A 100MHz 300mW T...
DataSheet: 2SD1768STPQ datasheet2SD1768STPQ Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Power - Max: 300mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-72 Formed Leads
Supplier Device Package: SPT
Description

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The 2SD1768STPQ is a single bipolar junction transistors, commonly known as BJTs. This type of transistor is energy efficient and highly versatile, and it has a wide variety of application fields. This article will provide a broad overview of the 2SD1768STPQ’s application fields and working principles.

Application Fields

The 2SD1768STPQ is a small-signal PNP BJT which is mainly used for amplification and switching applications. This transistor is ideal for use in audio applications as it has low distortion and excellent thermal resistance. As it has low noise and a very low input bias current, it is commonly used for amplifying low-level signals. The 2SD1768STPQ is also used for switching high-current applications.

This transistor is also used in a variety of digital applications. As it has a high switching speed and a wide dynamic range, it can be used in digital logic circuits. Additionally, it is commonly used in motor control applications, as it has a wide voltage range and can cope with high temperatures.

Additionally, these transistors can be used in power applications such as power supplies and motor control. The 2SD1768STPQ has a high gain and low internal control resistance, making it an ideal choice for these applications. Furthermore, it is suitable for use in high-voltage applications, as it has a high breakdown voltage and a low saturation voltage.

Working Principle

The 2SD1768STPQ is a PNP type of bipolar junction transistor (BJT). This type of transistor works by controlling the current between two terminals known as the \'base\' and \'emitter.\' The base voltage applied to the transistor controls the current between the two terminals. As the voltage applied to the base increases, the current between the base and the emitter increases, and vice versa. This is known as the "base current control" principle.

In addition to controlling the current between the base and emitter, the 2SD1768STPQ also controls the current between the collector and emitter. This type of transistor works by controlling the voltage between the collector and the emitter by applying a voltage to the base. As the voltage applied to the base increases, the voltage between the collector and the emitter also increases, resulting in an increase in the current between the collector and emitter. This is known as the "collector-emitter voltage control" principle.

The 2SD1768STPQ also has an internal resistance, which is known as the base-emitter resistance, or \'beta\'. This resistance helps to control the current between the base and the emitter, as well as the voltage between the collector and the emitter. The higher the beta value, the greater the current through the transistor.

Conclusion

The 2SD1768STPQ is a single bipolar junction transistor, commonly known as BJTs. This type of transistor is highly versatile and energy efficient, and it has a wide variety of application fields, ranging from audio applications to digital logic and power applications. Additionally, this transistor works by controlling the current between the base and emitter, as well as the voltage between the collector and emitter, with the help of its internal resistance, known as its beta value.

The specific data is subject to PDF, and the above content is for reference

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