2SD1628G-TD-H Discrete Semiconductor Products

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The 2SD1628G-TD-H is a NPN silicon epitaxial transistor developed for switching and amplifier applications. It has a maximum collector current of 500 mA and a maximum collector-base voltage of 150 V. 2SD1628G-TD-H transistors are typically used in power supply circuits, audio amplifiers, driver stages, and low frequency amplifiers. They are also useful for using high currents or large power dissipation.

Overview

A transistor is a semiconductor device used to switch and/or amplify a signal. The 2SD1628G-TD-H is a single-transistor, NPN type transistor that belongs to the bipolar, or BJT (Bipolar Junction Transistor), family. It is a small, three-terminal device that is used to control a larger current, such as that of a power supply. The three terminals, collector (C), emitter (E) and base (B), connect to circuits in order to switch and/or amplify a signal.

Application Field

The 2SD1628G-TD-H is mainly used for general purpose switching and amplification applications. It is often used in power supply circuits, audio amplifiers, driver stages, and low frequency amplifiers. Due to its design, it is also suitable for applications that require high electric currents and large power dissipation. It is mainly used in consumer electronics.

Working Principle

The BJT transistor operates based on the application of a base-emitter voltage. When a voltage is applied between the base and the emitter, a small current flows from the base to the emitter. This current then induces a larger current from the collector to the emitter. This is known as the \'beta\' of the transistor, where the current gain is between 50 and 250. The higher the beta value, the better the performance.

The basic operating principle of the 2SD1628G-TD-H is quite simple. When a voltage is applied between the base and the emitter, it creates a small current that controls the larger current that flows from the collector to the emitter. This current is then amplified and can be used to power electronic devices.

Conclusion

The 2SD1628G-TD-H is a NPN silicon epitaxial transistor developed for switching and amplifier applications. It belongs to the bipolar, or BJT, family of transistors and is mainly used for general purpose switching and amplification applications. It is suitable for applications that require high electric currents and large power dissipation. The 2SD1628G-TD-H operates based on the application of a base-emitter voltage, which controls the larger current that flows from the collector to the emitter. Thus, it is an ideal choice for applications such as power supply circuits, audio amplifiers, driver stages, and low frequency amplifiers.

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