Allicdata Part #: | 2SD1938FTLTR-ND |
Manufacturer Part#: |
2SD1938FTL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS NPN 20V 0.3A MINI |
More Detail: | Bipolar (BJT) Transistor NPN 20V 300mA 80MHz 200mW... |
DataSheet: | 2SD1938FTL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 300mA |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 100mV @ 3mA, 30mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 800 @ 4mA, 2V |
Power - Max: | 200mW |
Frequency - Transition: | 80MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | Mini3-G1 |
Base Part Number: | 2SD1938 |
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2SD1938FTL transistors are Bipolar Junction Transistors (BJTs) which are designed for use as single junction transistors. They are manufactured by NXP in the TO-220 package and come with a collector current rating of 1.5A and a maximum collector-emitter voltage of 300V. In addition, the 2SD1938FTL has a maximum collector-base voltage of 600V and a minimum base current of 50mA.
The primary purpose of the 2SD1938FTL transistors is for use as amplifying devices for audio, and other signal operating circuits. The 2SD1938FTL has a low base saturation region which allows the transistor to act as an amplifier by controlling the current flowing between the collector and emitter. This allows the design to be very efficient in terms of power consumption and current handling capabilities, while still achieving a high-level gain.
The operating principle of the 2SD1938FTL is based upon the effect of base currents within the transistor. A tiny base current, typically in the range of 50mA, when applied to the base of the transistor creates a large gain factor in the collector current and as a result, an amplified output. As the base current is increased, the collector current decreases and vice versa. When a larger base current is applied, the transistor will be in ‘saturation’, where the collector current is relatively low and the output is saturated or ‘clipped’.
The 2SD1938FTL has a very wide application field and can be used in a wide variety of amplifier and signal detection applications. Common examples include Class-D amplifiers, RF amplifiers, active filters and even in DC current sensing. In addition, 2SD1938FTL transistors are also widely used in low-power voltage regulation circuits due to their wide operating voltage range and low current consumption.
The extremely low power consumption and high output power of the 2SD1938FTL transistors makes them ideal for use in portable devices and battery-powered applications. They are also extremely frugal in terms of their use of real estate, making them a popular choice for use in space-constrained designs.
In conclusion, the 2SD1938FTL transistors are an ideal choice for use in a wide variety of amplifying and signal detection applications. As they are able to deliver a high level of gain while consuming minimal power and space, they are suited to designs requiring a reliable and customizable solution. The 2SD1938FTL transistors come in a TO-220 package and are manufactured by NXP.
The specific data is subject to PDF, and the above content is for reference
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