2SD11490SL

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	20mA
Voltage - Collector Emitter Breakdown (Max):	100V
Vce Saturation (Max) @ Ib, Ic:	200mV @ 1mA, 10mA
Current - Collector Cutoff (Max):	1µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	600 @ 2mA, 10V
Power - Max:	200mW
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	Mini3-G1
Base Part Number:	2SD1149

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The 2SD11490SL is a NPN single type bipolar transistor that is commonly used as a power transistor. It is typically used in applications such as audio amplifiers, industrial and automotive switching, and instrumentation amplifiers. The device is manufactured in a TO-126 package and is commonly used in high-power applications due to its high current gain, low leakage current, and low gate threshold.The 2SD11490SL has a maximum collector-emitter voltage of 800V, collector-base voltage of 850V, emitter-base voltage of 7V, and collector current of 17A. The device is also able to withstand high-power dissipation rates up to 200W at 25°C. Its high current gain and low leakage current allow for low gate threshold operation, which means it can be used for more precise switching applications.One of the most important parts of the 2SD11490SL is its field-effect transistor (FET) layer structure. This structure has two dielectric layers, one serving as a gate electrode and the other as a control electrode. The gate electrode has a much smaller area than the control electrode and the two are insulated from each other using an oxide layer. When a voltage is applied between the gate and control electrodes, it induces a field in the semiconductor material that separates the two layers. This field causes electrons in the semiconductor material to experience a force that helps move them through the material. This is called the transistor effect (or modulation effect). By varying the voltage applied between the two electrodes, the amount of current that can be passed through the transistor can be controlled.The 2SD11490SL also has a collector-base junction that allows for current flow from the collector to the base. This junction also serves as an input for the circuit, so that when a voltage is applied to it, the transistor will operate.When the transistor is turned on, current flows through the collector-base junction and is amplified by the transistor. This amplified current then flows through the collector-emitter junction and is passed to the load or circuit that it is connected to.In summary, the 2SD11490SL is a single type bipolar transistor that is used in a wide range of applications, including audio amplification, automotive switching, and instrumentation amplifiers. Its field-effect transistor layer structure, low gate threshold operation, and large current gain makes it ideal for these power-sensitive applications. Its collector-base junction also serves as an input for the device, allowing for precise voltage control.

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