Allicdata Part #: | 2SD1276AP-ND |
Manufacturer Part#: |
2SD1276AP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS NPN DARL 80V 4A TO-220F |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 80V 4A 2... |
DataSheet: | 2SD1276AP Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 4V @ 20mA, 5A |
Current - Collector Cutoff (Max): | 500µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 4000 @ 3A, 3V |
Power - Max: | 2W |
Frequency - Transition: | 20MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F-A1 |
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2SD1276AP transistors are designed with single bipolar junction, which is a device structure consisting of three terminals connected together with a central semiconductor component. It is usually made up of a sandwich of two doped semiconductor regions. It is an NPN type transistor – an initial” N” for Negative for the main terminal, “P” for Positive for a mid-terminal, and an “N” for Negative for a last terminal. These transistors are mainly used as switching and amplification functions in electronic circuits.
The 2SD1276AP have several excellent characteristics, such as low Collector-Emitter Saturation Voltage (Vce(sat)) and low collector current (Ic) that allows it to be used in low-voltage and low-power applications. Moreover, its most important feature is its high-speed switching capability due to its low turn-on time, high gain and good capacitive characteristics. This makes it suitable in a range of applications such as audio amplifier, power amplifier, switching power, and telecommunication.
In terms of its working principle, the 2SD1276AP functions by using the two N-type semiconductor regions and one P-type semiconductor region from a sandwich structure. The sandwich structure acts like a resistors, allowing current to flow between the terminals when the voltage is applied. The two outer terminals are called the emitter and collector, and the middle terminal is called the base.The current from the collector to the emitter is controlled by the current from the base to the emitter. When sufficient current flows through the base to the emitter, the sandwich gets “saturated” allowing current to flow from the collector to the emitter freely. This is what is referred to as an bipolar junction transistor in its “on” state. On the other hand, when currents below a certain threshold are used in the transistor, it operates in its “off” states, where current flowing from the collector to the emitter is blocked. In its “off” state, the 2SD1276AP is often used as a switch or in digital logic operations.
2SD1276AP transistors also have good noise immunity, thermal resistance and high input impedance, making them suitable for a variety of applications. They can be used in power supply circuits for computers, remote controls, and a variety of other electrical equipment. It is also used in many consumer electronics such as televisions and audiot.
In conclusion, 2SD1276AP transistors are versatile components capable of providing high-speed switching and low-voltage, low-power operation. They are suitable for use in a wide range of applications, such as audio amplifiers, power amplifiers, switching power, and telecommunication. Moreover, they have good noise immunity, thermal resistance, and high input impedance that makes them suitable for various electronic devices.
The specific data is subject to PDF, and the above content is for reference
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