2SD14850P Allicdata Electronics
Allicdata Part #:

2SD14850P-ND

Manufacturer Part#:

2SD14850P

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS NPN 100V 5A TOP-3F
More Detail: Bipolar (BJT) Transistor NPN 100V 5A 20MHz 3W Thro...
DataSheet: 2SD14850P datasheet2SD14850P Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 3A
Current - Collector Cutoff (Max): 50µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Power - Max: 3W
Frequency - Transition: 20MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TOP-3F
Supplier Device Package: TOP-3F-A1
Description

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2SD14850P Application Field and Working Principle

The 2SD14850P is a Bipolar Junction Transistor (BJT) also known as a single transistor. It is a type of semiconductor that is usually used as an amplifier or switch in current, voltage or optical signals.

2SD14850P Application Field

The 2SD14850P is used in a variety of applications, including:

  • Digital logic drivers
  • Multi-level drivers
  • Current capability up to 45A
  • Motor control
  • Stepper motor drives
  • Servo amplifiers with inductive loads
  • High-power audio amplifiers
  • High performance switching
  • Photovoltaics

The 2SD14850P is also used in other projects such as heating, ventilation and air conditioning (HVAC), panel meters, power supplies and LED display drivers.

2SD14850P Working Principle

The 2SD14850P is a BJT, which works on the principle that electrons move through the layers of a semiconductor material. This is known as the base-collector junction. The semiconductor material can be P-type, N-type or a combination of both. In a BJT, electrons move from the P-type layer in the base of the transistor to the N-type layer in the collector, forming what is known as a depletion region. When a voltage is applied to the base of the transistor, the electrons in that depletion region will be knocked out and start to flow from the collector to the emitter. This creates an amplification effect, and allows for a range of different circuit functions.

The 2SD14850P also features a dielectric layer between the base and collector. This helps to reduce thermal runaway and also helps to reduce cross talk. The transistor is capable of handling high frequencies, making it ideal for applications such as audio amplifiers and LED displays.

The 2SD14850P is a highly versatile transistor, and is suitable for a wide range of applications. Its wide current range and high frequency handling makes it an ideal choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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