2SD1805F-TL-E Allicdata Electronics
Allicdata Part #:

2SD1805F-TL-EOSTR-ND

Manufacturer Part#:

2SD1805F-TL-E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 20V 5A TP-FA
More Detail: Bipolar (BJT) Transistor NPN 20V 5A 120MHz 1W Surf...
DataSheet: 2SD1805F-TL-E datasheet2SD1805F-TL-E Datasheet/PDF
Quantity: 2100
Stock 2100Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: 2-TP-FA
Base Part Number: 2SD1805
Description

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2SD1805F-TL-E is a type of single bipolar junction transistor (BJT). It is mainly used in transistor amplifiers, audio amplifiers, power transistors, and switching circuits. The 2SD1805F-TL-E has two terminals, called the collector and the emitter, as well as a base terminal. The collector is the terminal from which current is received; the base is the terminal from which current is injected; and the emitter is the terminal from which current is output.

The 2SD1805F-TL-E has a maximum collector current (Ic) of up to 0.8A, and a maximum collector-emitter voltage (Vceo) of up to 70V. It also has high reliability, a low noise level, and a low power consumption. The high reliability is due to its improved layout design, which enables it to operate within an extreme application range. Furthermore, its low noise level makes it ideal for audio applications, and its low power consumption makes it suitable for power transistors and switching circuits.

The working principle of the 2SD1805F-TL-E can be described as follows: When current is applied to the base terminal, a small current, known as the base current, is injected into the base-emitter junction. The base current then causes a larger current to flow from the collector to the emitter, known as the collector current. The base-emitter junction is controlled by the base voltage, and the collector-emitter voltage depends on the collector current. The current gain, or hFE, of the 2SD1805F-TL-E is dependent on the base current, collector current, and the collector-emitter voltage.

The 2SD1805F-TL-E is capable of operating over a wide range of temperature, from -55°C to 150°C. This makes it suitable for applications where extreme temperatures are encountered. Furthermore, its high current capability and low power consumption make it ideal for use in audio amplifiers, power transistors, and switching circuits. In addition, its improved layout design ensures improved reliability in extreme applications.

In conclusion, the 2SD1805F-TL-E is a type of single bipolar junction transistor, which is mainly used in audio amplifiers, power transistors, and switching circuits. It has two terminals, the collector and the emitter, as well as a base terminal. It is capable of operating over a wide range of temperatures, from -55°C to 150°C, and features a maximum collector current of up to 0.8A, and a maximum collector-emitter voltage of up to 70V. Furthermore, its high current capability, low noise level, and low power consumption make it ideal for audio applications and switching circuits. Its improved layout design ensures improved reliability in extreme applications.

The specific data is subject to PDF, and the above content is for reference

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