2SD1816T-E

Series:	--
Packaging:	Bulk
Part Status:	Last Time Buy
Transistor Type:	NPN
Current - Collector (Ic) (Max):	4A
Voltage - Collector Emitter Breakdown (Max):	100V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 200mA, 2A
Current - Collector Cutoff (Max):	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 500mA, 5V
Power - Max:	1W
Frequency - Transition:	180MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	TP
Base Part Number:	2SD1816

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

.

2SD1816T-E Application Field and Working Principle

The 2SD1816T-E is a single, 500mW NPN silicon epitaxial transistor with a high frequency response. It is a type of bipolar junction transistor (BJT) with a collector current of up to 0.3A and a collector-emitter voltage of up to 80V. It features a high transition frequency and is therefore suitable for applications such as high-speed switching and amplifying.

Overview of Device

The 2SD1816T-E is a small signal transistor that is comprised of three layers. It has a PNP inner layer of silicon between two NPN outer layers of silicon. The outer NPN layers form the collector and emitter regions while the PNP inner layer forms the base region. The base region also referred to as the control region, is used to regulate the current between collector and emitter regions. The 2SD1816T-E is available in a variety of packages depending on the desired application and environment. A few of the common packages are TO-92, DIP, and SOT-323.

2SD1816T-E Working Principle

The 2SD1816T-E works on the principle of minority carrier injection. Current flows from the collector to the emitter of the transistor as long as there is forward biased voltage on the base. This voltage is referred to as the threshold voltage and it can be varied by varying the current that flows through the base.When current flows through the base of the 2SD1816T-E, electrons are injected into the base region creating a ‘cloud’ of electrons. This cloud causes a depletion region in the base, which is referred to as the space-charge layer or the base region. Due to the decrease in the density of holes in the base region, a potential barrier is created. As the potential barrier increases, it causes the electrons to gain energy and push the holes away from the base region. This increases the potential barrier further, which in turn generates more current flowing through the base. This is known as the Avalanche effect, which rapidly increases the current without requiring any extra voltage to be applied.When sufficient voltage is applied to the base, the current flowing through the base rapidly increases, which in turn causes a larger current to flow through the emitter and collector. This increase in current causes a drop in voltage between the emitter and collector of the 2SD1816T-E, which is known as the saturation voltage. This is the point at which a large current can flow between the two regions with a minimal voltage.

2SD1816T-E Applications

The 2SD1816T-E is most commonly used in medium-power applications such as audio amplifiers, switching regulators, amplifiers for communication systems, and line drivers. It is well suited for high-frequency applications due to its high gain-bandwidth product and low rise and fall times.Other applications include power amplifiers, power converters, and motor control circuits. The 2SD1816T-E is particularly useful for motor control circuits as it is capable of withstanding high-current and has a high gain-bandwidth product. This helps to ensure that the motor drivers can respond quickly to changes in the motor rotation rate. The 2SD1816T-E can also be used in LED lighting applications as it is capable of controlling the current that flows through the LED. This allows LED lighting to be more efficient and bright while offering the user better control over the intensity of the light.

Conclusion

The 2SD1816T-E is a single, 500mW NPN silicon epitaxial transistor. It has a collector current of up to 0.3A and a collector-emitter voltage of up to 80V and is suitable for high-frequency applications. The 2SD1816T-E is most commonly used in medium-power applications such as audio amplifiers, switching regulators, amplifiers for communication systems, and line drivers. It can also be used in motor control and LED lighting applications due to its high gain-bandwidth product and ability to quickly respond to changes in voltage.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description