2SD1835S

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The 2SD1835S transistor is a part of Sanken Electric Co.\'s family of single-transistor, bipolar junction transistors (BJTs). This transistor is discriminated by its high-voltage (Vce) and high-power rating, making it suitable for a wide variety of applications.

The 2SD1835S transistor is best suited for load switching, power amplification, and for use in hot-swapping, Voltage Regulator Modules (VRMs) and other power supply subsystems. It is also capable of providing voltage stabilization for high-voltage devices. Moreover, the 2SD1835S offers temperature protection and EMI suppression, making it reliable in a variety of applications.

The 2SD1835S has a fast switching speed and is capable of controlling current up to around 0.5A. The collector-emitter voltage (Vce) can reach 200V while the collector current (IC) can handle 75mA. It has a low collector-base voltage (Vcb) of 30V, which makes it suitable for high-voltage applications.

The 2SD1835S is available in two main sizes: TO-220 (2SD1835S-T2) and TO-92 (2SD1835S-T3). These two versions feature a wide ranging collector-emitter saturation voltage range of 0.4 to 0.7V. This range enables the 2SD1835S to maintain excellent switching performance even in light loads.

2SD1835S transistors also feature high Maximum Collector-Emitter Breakdown Voltage (Vce(max)) of 200V and a maximum Collector-Base Breakdown Voltage (Vcb) of 180V, allowing it to control multiple high-voltage stages with fewer connections. Its Maximum Collector-Base Voltage (Vce(max)) is 60V. The Maximum Storage Temperature (Tstg) of 175°C is also a notable feature of this device.

In terms of working principle, 2SD1835S transistors are bipolar Junction Transistors (BJT) that require two p-n junctions to work. The first p-n junction is formed by combining an N-type material (emitter) and P-type material (base). P-n junction two is formed by combining the N-type material (emitter) and the P-type material (collector). This creates a three-layer, connected structure.

The base terminals control the behavior of the transistor; the collector terminal acquires or provides current; and the emitter terminal is responsible for emitting charge carriers. When voltage is applied to the transistor’s base, electrons are attracted to the collector whereas holes are attracted to the emitter, thus forming a unary current path between the emitter and collector.

The current gain of the transistor, also known as hFE, is determined by the base current (IB), emitter current (IE), collector current (IC), and the voltage between the collector and emitter (VCE). Low values of hFE indicate that the transistor is more active, while high values of hFE indicate that the transistor is less active. This means that a transistor’s hFE is an important parameter to consider when selecting the suitable device for a particular application.

In summary, the 2SD1835S transistor offers high-voltage and high-power ratings, making it suitable for power amplification, load switching, and voltage stabilization. The device is available in two main sizes: TO-220 (2SD1835S-T2) and TO-92 (2SD1835S-T3) and has useful features such as built-in temperature protection and EMI suppression. The 2SD1835S also has a fast switching speed and can control current up to 0.5A. The working principle of the 2SD1835S is based on two p-n junction and its current gain is determined by the base current, emitter current, collector current, and the voltage between the collector and emitter.

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