| Allicdata Part #: | 869-1066-ND |
| Manufacturer Part#: |
2SD1913S |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | SANYO Semiconductor (U.S.A) Corporation |
| Short Description: | TRANS NPN 60V 3A TO-220ML |
| More Detail: | Bipolar (BJT) Transistor NPN 60V 3A 100MHz 2W Thro... |
| DataSheet: | 2SD1913S Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 3A |
| Voltage - Collector Emitter Breakdown (Max): | 60V |
| Vce Saturation (Max) @ Ib, Ic: | 1V @ 200mA, 2A |
| Current - Collector Cutoff (Max): | -- |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 140 @ 500mA, 5V |
| Power - Max: | 2W |
| Frequency - Transition: | 100MHz |
| Operating Temperature: | -- |
| Mounting Type: | Through Hole |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220ML |
Description
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The 2SD1913S is a single, bipolar junction transistor (BJT) which is widely used in electronic circuit applications. It has a power dissipation of up to 1W and a maximum collector current of up to 800mA. The 2SD1913S is composed of two base-emitter junctions, one collector junction and the necessary biasing resistors.The 2SD1913S works by the movement of electrons within its various junctions. When the base-emitter junction is forward biased, current will flow from its emitter to its collector. This current is then amplified as it passes through the base-emitter junction, which is responsible for the majority of the amplifier’s gain.The 2SD1913S is often used in low-power switching applications, audio amplifiers and more general electronics circuits. The transistor\'s low power rating, reasonable gain and relatively low price make it a popular choice for light duty applications including radios, TVs, VCRs and other consumer electronics.The 2SD1913S is also very popular for the use in motor drive circuits due to its ability to handle high current. The transistor’s low power rating also makes it an ideal choice for high frequency switching in which low power dissipation is desired.The 2SD1913S’s base-emitter junction is also ideal for use as an input stage in a variety of amplifier applications. Its high voltage, wide range linearity and low leakage make it suitable for use in audio amplifiers, mixing amplifiers and other types of amplifier designs.The 2SD1913S’s high gains make it incredibly versatile and suitable for a wide range of applications. It can be used as an amplifier in audio circuits, switching circuits, and more. Additionally, its low power rating and reasonable price point make it suitable for use in consumer electronics and a variety of other electrical engineering projects.In conclusion, the 2SD1913S is a single, bipolar junction transistor (BJT) which offers a versatile range of applications. Its wide linearity and low power rating make it suitable for use in mixing amplifiers, audio amplifiers, motor drive circuits and other consumer electronics. Additionally, its reasonable price point and wide range of gains make it a cost-effective component for the majority of electrical engineering projects.The specific data is subject to PDF, and the above content is for reference
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2SD1913S Datasheet/PDF