2SD1979GSL

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Transistors are used in a variety of electronics applications, such as amplifiers, multiplexers, switching circuits, and digital logic devices. The 2SD1979GSL is a bipolar junction transistor (BJT) specific for power-control applications.​​​​​​​ This device has robust characteristics and is highly employed in applications that require several large power control capacity like high power supplies, voltage regulators, motor drivers, lamp drivers, and other industrial automation devices.

The 2SD1979GSL is a single type bipolar junction transistor (BJT). These devices are formed by joining two PN junction devices. BJTs have an NPN or PNP configuration, which determine the current flow direction. Depending on the type of BJT, there are two operations modes: the active mode and the saturation mode.

The active mode is used on BJTs with very low currents and high voltages, presenting moderate linear behavior. When in a saturation mode, the IB current is high and the input current to the base is also high. On this mode, the BJT operates like an on/off switch.

The 2SD1979GSL presents an FT of 160 MHz, an Ic of 5 Amps, a VCEO of 80V, and a VBE of (1.7-1.9)V. Its internal resistance is low, generating good thermal resistance compared to other components. The power dissipation of this particular transistor is 1.0W.

Therefore, 2SD1979GSL is a single bipolar junction transistor (BJT) used in power-control applications. It allows a high current capacity through the base and collector of 60V and 5A, respectively. Moreover, its low internal resistance, combined with its Rugged characteristics make it an ideal choice for applications that require large power-control capacities. This device is also highly employed on high power supplies, voltage regulators, motor drivers, lamp drivers, and other industrial automation devices.

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