2SD19960RA Allicdata Electronics
Allicdata Part #:

2SD19960RATB-ND

Manufacturer Part#:

2SD19960RA

Price: $ 0.12
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS NPN 20V 0.5A MT-1
More Detail: Bipolar (BJT) Transistor NPN 20V 500mA 200MHz 600m...
DataSheet: 2SD19960RA datasheet2SD19960RA Datasheet/PDF
Quantity: 2000
2000 +: $ 0.10576
Stock 2000Can Ship Immediately
$ 0.12
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Power - Max: 600mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 3-SIP
Supplier Device Package: MT-1-A1
Base Part Number: 2SD1996
Description

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2SD19960RA transistor is a bipolar junction transistor that is classified under single transistors under the transistors – bipolar (BJT) category. This type of transistor is usually used for power amplification applications in the radio frequency and power amplifier ranges, making it an ideal transistor for the application of radio use.

The 2SD19960RA can handle high-voltage, up to a maximum of 1600 volts. They also have a very good breakdown voltage of greater than 1250V. The device operates at very high frequencies and can amplify power up to 200 watts peak, making it suitable for use in audio systems and sound amplifiers.

The 2SD19960RA is a three-pin device consisting of the Emitter, Collector and Base/Gate. The 2SD19960RA has a single NPN polarity, making it suitable for applications such as voltage and current buffering, H-bridge transistors, and inverters. This type of transistor has a low output power, but can be configured to run at very high frequencies and amplifies power with a very high stability.

The working principle of the 2SD19960RA is based on the principle of using minority carriers to produce the output current. When the voltage applied to the base/gate is raised, more current is sent to the emitter. This allows more electrons to flow from the emitter to the collector. The current produced when the base/gate is raised is termed as the collector current. The collector current produced is amplified and is directly proportional to the voltage applied at the base/gate.

The 2SD19960RA is widely used in radio applications, and can further be used in applications such as amplifiers, audio signals, power supplies, and radio communication. This type of transistor is also widely used in switching applications in power supplies, especially in the automotive industry. The 2SD19960RA has higher current gain when compared to similar transistors. Furthermore, it has a high saturation current which leads to a low power consumption and improved power efficiency.

The current gain of the 2SD19960RA is determined by the application of the transistor. The current gain of this type of transistor ranges from 40 to 500. The frequency range of the device itself is typically between 100 kHz to 500 MHz.

Overall, the 2SD19960RA is an ideal transistor for applications where a high output current needs to be amplified with a good stability. This type of bipolar junction transistor is suitable for applications such as switching, audio signals, power supplies, and radio communication. The device is able to amplify power up to 200 watts peak while maintaining a good stability and efficiency. Furthermore, it has a high current gain which also enhances its performance.

The specific data is subject to PDF, and the above content is for reference

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