3LN01C-TB-E Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 3LN01C-TB-E is a single N-channel junction field effect transistor (JFET) which is commonly used in low-power, high gain applications. It has a substantial field-effect mobility and is often used as a substitute for traditional bipolar transistors due to its almost unlimited gain and low power consumption. Its unique design allows for low-noise and low-power amplifier operations.

The 3LN01C-TB-E is a basic P-channel JFET device, which is suitable for low-level signal amplification. It operates in two major modes depending on the biasing of the device gate. When the gate-source voltage (Vgs) is negative, the device works in the depletion mode, which is usually used as an input buffer, voltage limiter, or current regulator. The main features of a JFET operating in depletion mode include low input impedance and a linear increase of the output voltage with an increasing input voltage. When the Vgs is positive, then the device operates in the enhancement mode, which is usually used in amplifier operations.

The maximum gate voltage that can be applied to the 3LN01C-TB-E as a positive Vgs is 8 volts, with a gate-soirito voltage of 3 volts and an remain-soirito voltỳe of 6 volts. The drain current is derived from an input current of 1.0 μA and a maximum Vgs of 8 volts. Furthermore, it has a continuous drain-source current rating of 1.5A and a peak drain-source rating of 2.5A. It is also capable of withstanding a total amount of power dissipation up to 0.39 watts.

The 3LN01C-TB-E also features a wide range of specialist applications such as audio amplifiers, active filters, current blockers, and low-noise preamplifiers. It is especially useful when used as a current regulator, as it is able to control the current flowing through the JFET without the need for a voltage-divider network. This makes it an ideal choice for low-power/high-gain amplification applications.

The working principle of the 3LN01C-TB-E is fairly simple. When a positive voltage is applied to the gate-source combination, the current between the source and drain increases exponentially. This is due to the depletion of the majority carrier electrons surrounding the gate structure. As a result, the current flowing between the source and drain becomes regulated.

The current between the gate and drain is proportional to the gate-source voltage, with a minimum current passing through the device when the voltage is below a certain threshold. Above this threshold, the current starts to increase and can be accurately controlled by manipulating the gate source voltage. With its high mobility, low-noise characteristics and low current consumption, the 3LN01C-TB-E is an ideal choice for a variety of low-power/high-gain applications.

The specific data is subject to PDF, and the above content is for reference