3LN01M-TL-E Discrete Semiconductor Products |
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Allicdata Part #: | 3LN01M-TL-EOSTR-ND |
Manufacturer Part#: |
3LN01M-TL-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 0.15A |
More Detail: | N-Channel 30V 150mA (Ta) 150mW (Ta) Surface Mount ... |
DataSheet: | 3LN01M-TL-E Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.3V @ 100µA |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SC-70/MCPH3 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 150mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7pF @ 10V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 1.58nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3.7 Ohm @ 80mA, 4V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4V |
Current - Continuous Drain (Id) @ 25°C: | 150mA (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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3LN01M-TL-E transistors are one of the most common types of field effect transistors (FETs) in modern electronic devices. These devices possess several unique features that make them ideal for certain applications over other types of transistors. They are useful for memory applications, low power amplifiers, low-power switching, and voltage regulation. This article will explore the application field and working principle of these devices.
Applications of 3LN01M-TL-E Transistors
The 3LN01M-TL-E transistors are used in low-power circuits such as audio amplifiers, preamplifiers, frequency changers, CMOS logic, and other small-signal applications. They are also widely used in automotive and consumer electronics, because they are low-power, durable, and low-cost. In addition, they provide excellent performance in high frequency applications. For example, in audio amplifiers, these transistors can be used to buffer audio signals, which help reduce distortion and provide improved sound quality. Other applications include voltage regulators, DC-DC converters, wattage meters, and low-power switching.
Working Principle of 3LN01M-TL-E Transistors
3LN01M-TL-E transistors are based on the Physics of the metal-oxide-semiconductor field-effect transistor (MOSFET). They are controlled by voltage rather than current, which allows for more efficient applications. In other words, with this type of transistor, the current flow is dependent on the voltage across the gate, rather than the current itself. This allows the transistor to be switched on and off quickly and efficiently.
When a positive gate voltage is applied, negative electrons are attracted to the gate and the device becomes \'p-type\', meaning that current can flow through the device. Conversely, when a negative voltage is applied, positive holes are attracted to the gate and the device becomes \'n-type\', meaning that current cannot flow through it. This feature is what allows 3LN01M-TL-E transistors to be used as switches and regulators.
3LN01M-TL-E transistors have several advantages over other types of transistors. They are fast, have low power consumption and high efficiency. Also, because they do not require additional control elements such as diodes, capacitors or resistors, 3LN01M-TL-E transistors are a low-cost solution for low-power applications. Finally, their low-power capabilities make them ideal for battery-powered mobile devices.
Conclusion
In conclusion, 3LN01M-TL-E transistors are a type of FET that are widely used in a variety of low-power applications. Their ability to switch quickly and efficiently allows them to be used as switches and voltage regulators in both consumer and automotive electronics. Additionally, their low-power capabilities make them ideal for battery-powered devices. As they are low-cost and easily accessible, they are widely used in a range of small-signal applications.
The specific data is subject to PDF, and the above content is for reference
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