3LN01S-TL-E Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 3LN01S-TL-E is a type of single N-channel MOSFET, which is short for Metal Oxide Semiconductor Field-Effect Transistor. A MOSFET serves as a type of switch in the form of an integrated circuit (IC), and it can either be an N-channel type or a P-channel type. N-channel MOSFETs, like the 3LN01S-TL-E, are comprised of an insulated gate in between two doped regions, as well as a control terminal called the gate. The 3LN01S-TL-E has a low threshold voltage of 1.8 V and a high breakdown voltage of 30 V and it is widely used in a variety of applications in order to control current flow.

Application Field

The 3LN01S-TL-E MOSFET is widely used in consumer electronics such as televisions and telephones as well as in home appliances such as washing machines and microwaves. They are also used in automotive applications such as powertrain controls, door locks, and audio systems. In addition, MOSFETs like the 3LN01S-TL-E are used in power generation and distribution systems, consumer electronics, and home automation systems.

Working Principle

When operating a 3LN01S-TL-E MOSFET, the gate must be at a higher potential than the source in order to allow current flow through the channel. When the gate is at a lower potential than the source, current flow is blocked and the channel is turned off. The higher potential of the gate allows a voltage to be applied to the channel, which then increases the number of charge carriers available in the channel. This increase in charge carriers allows for conduction through the channel and current flow. The low threshold voltage of the 3LN01S-TL-E makes it ideal for low voltage applications, as the gate does not need to be at a high potential in order to turn on the channel.

The 3LN01S-TL-E also has a relatively high breakdown voltage, meaning it can withstand a large amount of current before the channel breaks down. This makes it suitable for power applications like motor control, as it will be able to handle large amounts of current without breaking down. The insulated gate of the MOSFET allows for it to be used in a wide range of applications, as it is able to handle higher voltages and currents without suffering any damage.

In summary, the 3LN01S-TL-E is a single N-channel MOSFET with a low threshold voltage of 1.8 V and a high breakdown voltage of 30 V. It is used in a variety of applications such as consumer electronics, automotive applications, power systems, and home automation. The insulated gate allows for current flow when a higher potential is applied to the gate compared to the source, and makes this MOSFET capable of handling higher voltages and currents without suffering any damage.

The specific data is subject to PDF, and the above content is for reference