3LN01M-TL-H Discrete Semiconductor Products

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The 3LN01M-TL-H is a single N-channel MOSFET transistor module. It is a type of field-effect transistor that utilizes a voltage signal to control the current through a channel. The most special characteristic of this MOSFET transistor is that it requires a very low input power to operate and shows excellent switching characteristics. It is considered as one of the most efficient transistors available currently and is a popular choice for various applications.

The 3LN01M-TL-H is constructed with an N-type substrate where a thick oxide layer overlaps the source and drain regions. The transistor is capable of handling maximum drain current of 15A, maximum drain voltage of 30V and comes with a low on-resistance of 0.012Ω. It has an operating temperature of -55°C to 150°C and its working power supply voltage ranges from 5V to 30V.

The working principle of the 3LN01M-TL-H transistor is based on the electrostatic field-effect. It consists of source, gate and drain terminals. The source and drain terminals are connected across the PN junction of the transistor and the gate terminal is connected to the gate oxide. When a positive voltage/current is applied to the gate terminal, a depletion layer is formed and when the gate voltage is increased, the current between the source and the drain increases.The 3LN01M-TL-H transistor is mainly used in applications requiring high speed switching. It can be used in voltage regulators, amplifier circuits, buffers and drivers, power supplies and transducers. It is also used in high power amplifier circuits and other medium to high power switch circuits.In addition, it is an excellent choice for use in multiplexers, power diverters, power drivers and pulse-width modulation circuits. It is also used in low voltage and low power circuits such as in electrochemical processes.It can also be used in tall structures where the environment is lightning-prone. Due to its superior switching characteristics, the 3LN01M-TL-H transistor is commonly used in telecommunication and networking equipment, automotive electronics and consumer appliances.

The 3LN01M-TL-H transistor is designed to operate with low power and high speed switching. Its compact size and low price make it an attractive choice for many applications. It is considered as one of the most efficient transistors available in the market, offering excellent switching characteristics and high reliability. The high switching speed and low power consumption provide the 3LN01M-TL-H transistor with numerous advantages such as improved system performance, better power efficiency and broad network compatibility.

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