3LN01SS-TL-E Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	--
Package / Case:	SC-81
Supplier Device Package:	SC-81 (SSFP)
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	150mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	7pF @ 10V
Vgs (Max):	±10V
Gate Charge (Qg) (Max) @ Vgs:	1.58nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	3.7 Ohm @ 80mA, 4V
Drive Voltage (Max Rds On, Min Rds On):	1.5V, 4V
Current - Continuous Drain (Id) @ 25°C:	150mA (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction to 3LN01SS-TL-E

3LN01SS-TL-E is a Field-Effect Transistor (FET) from the Single MOSFET product line. This model has been designed to handle a wide variety of applications and is generally used where performance stability and higher power handling capacity are required.

Applications

3LN01SS-TL-E is typically used as a switch or other application in medium-voltage circuits (typically ranges between 10 and 20V). It can also be used in automotive, industrial and lighting applications, as well as other medium-power applications.The 3LN01SS-TL-E is available in both through-hole and surface mount packages, making it ideal for applications where a more compact physical size is desired.

Features

The 3LN01SS-TL-E is designed to handle high power levels, making it well-suited for demanding designs. It features a maximum drain current rating of 20A, making it suitable for medium-power applications that require higher current handling capabilities. The 3LN01SS-TL-E offers an extremely low drain-source on-resistance of 0.039 Ohms, allowing for maximum output efficiency. Additionally, its extremely low gate-source threshold voltage of 0.4V allows for greater flexibility in circuit design.

Working Principle

At its most basic level, the 3LN01SS-TL-E is an electrostatic transistor. It operates according to the same theory as a regular transistor, with the main difference being the elimination of base bias current.When a positive voltage is placed on the gate terminal, current starts to flow through the device. This causes a voltage difference between the source and drain terminals, which is what enables the transistor to perform its function as a switch.The 3LN01SS-TL-E is designed to have an extremely low gate-source threshold voltage. This means that it does not require a high voltage to turn on and can function with only a low amount of current. Once the current is applied, the device continues to remain in the “on” state until either the voltage or current is removed.

Conclusion

The 3LN01SS-TL-E is a Field-Effect Transistor (FET) from the Single MOSFET product line. It is designed to offer excellent performance in applications that require higher power handling capabilities, and its extremely low gate-source threshold voltage and low drain-source on-resistance ensures that it can meet these demands. The 3LN01SS-TL-E is ideal for medium-voltage and medium-power applications, and both through-hole and surface mount packages are available.

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