3LN01SS-TL-H

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The 3LN01SS-TL-H is a single N-channel enhancement-mode MOSFET based on a vertical DMOS technology and is contained in the 3LNSS-TL-H series product lineup. This integrated circuit is mainly used for low power or low voltage switching applications, such as industrial, consumer, and automotive applications. It is designed to provide high reliability and low on-state resistance. Its excellent current drive ability, fast switching characteristics, and low on-state resistance enable the 3LN01SS-TL-H to be used for a wide range of tasks, beyond the scope of a typical MOSFET.

This device features a drain-to-source breakdown voltage (BDS) of 60 V (with a gate source voltage of ± 20 V), a maximum drain current of 2.6 A, and a gate threshold voltage (VGS) of 2 V. It also has a maximum continuous drain current of 0.7 A. In addition, it has a typical on-state resistance (RDS) of 0.18Ω.

The primary working principle of a MOSFET is based on the flow of electron holes. When a positive charge is applied to the gate of the MOSFET, the width of the depletion region, which is a region of negative charge between the Source and Drain terminals, increases. This then reduces the resistance between the Source and Drain terminals and causes current to flow from the Source to the Drain.

The 3LN01SS-TL-H was specifically designed to have low on-resistance, which allows it to be used in low-power switching applications. Furthermore, its high current drive ability and fast switching characteristics make it a suitable choice for high-speed switching applications. Additionally, the 3LN01SS-TL-H can be used for applications such as motor control, power management, and audio amplification as well.

In summary, the 3LN01SS-TL-H is a MOSFET device which uses a vertical DMOS technology and it is specifically designed for low power or low voltage switching applications and high-speed switching applications. Its high current drive ability and fast switching characteristics enable it to be used for a wide range of tasks, beyond the scope of a typical MOSFET.

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