71V30L35TFI8

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Dual Port, Asynchronous
Memory Size:	8Kb (1K x 8)
Write Cycle Time - Word, Page:	35ns
Access Time:	35ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	64-LQFP
Supplier Device Package:	64-TQFP (10x10)
Base Part Number:	IDT71V30

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Memory

71V30L35TFI8 memory is a type of computer memory that is ideal for a variety of applications as it is both cost-effective and reliable. This type of non-volatile memory is particularly well-suited for applications where quick response and fast writes are necessary due to its fast-write rate, low voltage operation, and wide range of temperature operations. Furthermore, its low power consumption, and high density makes it an ideal choice for a variety of applications. 71V30L35TFI8 is often used in smartphones, tablets, and other mobile devices due to its small size, low power, and high write rate. Additionally, it is often used in embedded computers as well as automotive and industrial applications where data must be stored reliably and for a longer time period. Finally, 71V30L35TFI8 memory is used in robotic systems, medical devices, and avionics where reliability and fast response are essential.The 71V30L35TFI8 memory operates through the use of a transistor and an array of other conductive components. Its memory cells are arranged in a matrix, which allows for random access. The memory cells are based on a floating gate technology with a write cycle that is enabled through the use of a transistor’s gate-source and gate-drain currents. This write cycle can successfully store and retain data for up to 10 years.When a memory write or read occurs, the appropriate cells in the memory array change their voltage level, which triggers the circuitry to recognize this change as a write or read operation. With a write operation, the transistor draws pulses of charge from the first source and pumps it onto the second source and sink. This produces a write operation while reading involves an opposite process, which senses the charge stored on the cell’s floating gate. 71V30L35TFI8 memory also uses Voltage Level Shifting (VLS) technology to enable access to multiple sources. This technology allows the system to write or read data to or from different voltage levels, making it much easier to operate within a multi-voltage environment. Furthermore, VLS also increases the reliability of the memory by limiting the potential amount of cell failures. 71V30L35TFI8 modules are available in standard footprints such as SODIMM and DIMM, which makes it ideal for the embedded systems and PCs. They are also capable of operating in temperatures ranging from -40°C to +85°C, providing a wide operating temperature range for these memory cells. These features, combined with the fact that 71V30L35TFI8 is an economical and reliable memory solution, make it an ideal choice for a wide range of applications.

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